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首页> 外文期刊>Japanese journal of applied physics >Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
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Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors

机译：Al2O3-栅极AlGaN / GaN MOS高电子迁移率晶体管的电流线性度和操作稳定性

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摘要

To investigate current linearity and operation stability of metal-oxide-semiconductor (MOS) AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and characterized the Al2O3-gate MOS-HEMTs without and with a bias annealing in air at 300 degrees C. Compared with the as-fabricated (unannealed) MOS HEMTs, the bias-annealed devices showed improved linearity of I-D-V-G curves even in the forward bias regime, resulting in increased maximum drain current. Lower subthreshold slope was also observed after bias annealing. From the precise capacitance-voltage analysis on a MOS diode fabricated on the AlGaN/GaN heterostructure, it was found that the bias annealing effectively reduced the state density at the Al2O3/AlGaN interface. This led to efficient modulation of the AlGaN surface potential close to the conduction band edge, resulting in good gate control of two-dimensional electron gas density even at forward bias. In addition, the bias-annealed MOS HEMTshowed small threshold voltage shift after applying forward bias stress and stable operation even at high temperatures. (C) 2017 The Japan Society of Applied Physics
机译：为了研究金属氧化物半导体（MOS）AlGaN / GaN高电子迁移率晶体管（HEMT）的电流线性和操作稳定性，我们制造了Al2O3栅极MOS-HEMT并对其进行了表征，并在其中进行了表征C.与未退火的MOS HEMT相比，即使在正向偏置条件下，偏置退火的器件也显示出IDVG曲线的线性度得到改善，从而导致最大漏极电流增加。偏置退火后也观察到较低的亚阈值斜率。通过对在AlGaN / GaN异质结构上制造的MOS二极管进行精确的电容-电压分析，发现偏置退火有效地降低了Al2O3 / AlGaN界面处的态密度。这导致在导带边缘附近有效地调制AlGaN表面电势，即使在正向偏压下，也能对二维电子气密度进行良好的栅极控制。此外，偏置退火的MOS HEMT在施加正向偏置应力后显示出较小的阈值电压偏移，即使在高温下也能稳定运行。 （C）2017日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2017年第10期|101001.1-101001.8|共8页
  • 作者

    Nishiguchi Kenya; Kaneki Syota; Ozaki Shiro; Hashizume Tamotsu;

  • 作者单位

    Hokkaido Univ, Grad Sch Informat & Sci Technol, Sapporo, Hokkaido 0608628, Japan|Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan;

    Hokkaido Univ, Grad Sch Informat & Sci Technol, Sapporo, Hokkaido 0608628, Japan|Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan;

    Hokkaido Univ, Grad Sch Informat & Sci Technol, Sapporo, Hokkaido 0608628, Japan|Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan|Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan;

    Hokkaido Univ, Grad Sch Informat & Sci Technol, Sapporo, Hokkaido 0608628, Japan|Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan;

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