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首页> 外文期刊>Japanese journal of applied physics >Domain structure of BiFeO_3 thin films grown on patterned SrTiO_3(001) substrates
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Domain structure of BiFeO_3 thin films grown on patterned SrTiO_3(001) substrates

机译：在图案化SrTiO_3（001）衬底上生长的BiFeO_3薄膜的畴结构

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摘要

Recently, new functionalities of ferroelectric domain walls (DWs) have attracted much attention. To realize novel devices using the functionalities of the DWs, techniques to introduce the DWs at arbitrary positions in the ferroelectric thin films are necessary. In this study, we have demonstrated the introduction of the DWs at arbitrary positions in epitaxial BiFeO3 (BFO) thin films using the patterned surface of the SrTiO3 (STO) single-crystal substrate. On the slope pattern of the STO surface, the in-plane orientation of BFO has changed because the in-plane orientation of BFO can be controlled by the step propagation direction of the patterned surface. From the piezoresponse scanning force microscopy and X-ray diffraction reciprocal space mapping results, charged 109 degrees DWs have been introduced into the BFO thin film at the bottom and top of the slope pattern of the STO surface. In addition, the conductivity modulation of the positively charged DW has been observed by current-sensitive atomic force microscopy imaging. (C) 2017 The Japan Society of Applied Physics
机译：最近，铁电畴壁（DW）的新功能引起了人们的广泛关注。为了利用DW的功能实现新颖的器件，需要将DW引入铁电薄膜中任意位置的技术。在这项研究中，我们已经证明了使用SrTiO3（STO）单晶衬底的图案化表面在外延BiFeO3（BFO）薄膜中任意位置引入DW。在STO表面的倾斜图案上，BFO的面内方向已更改，因为BFO的面内方向可以通过构图表面的步进传播方向进行控制。从压电响应扫描力显微镜和X射线衍射的倒数空间映射结果来看，已将带电109度DWs引入到BFO薄膜中，位于STO表面的倾斜图案的底部和顶部。另外，通过电流敏感的原子力显微镜成像已经观察到带正电的DW的电导率调制。 （C）2017日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2017年第10s期|10PF17.1-10PF17.4|共4页
  • 作者

    Nakashima Seiji; Seto Shota; Kurokawa Yuta; Fujisawa Hironori; Shimizu Masaru;

  • 作者单位

    Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Himeji, Hyogo 6712280, Japan;

    Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Himeji, Hyogo 6712280, Japan;

    Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Himeji, Hyogo 6712280, Japan;

    Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Himeji, Hyogo 6712280, Japan;

    Univ Hyogo, Grad Sch Engn, Dept Elect & Comp Sci, Himeji, Hyogo 6712280, Japan;

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