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首页> 外文期刊>Japanese journal of applied physics >Introduction of charged domain walls into BiFeO_3 thin films using a pit-patterned SrTiO_3 (001) substrate
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Introduction of charged domain walls into BiFeO_3 thin films using a pit-patterned SrTiO_3 (001) substrate

机译：使用凹坑图案化的SRTIO_3（001）衬底将带电域壁引入BIFEO_3薄膜

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摘要

This work demonstrated the artificial introduction of charged domain walls (CDWs) into a ferroelectric BiFeO3 (BFO) thin film by domain structure control using a pit-patterned SrTiO3 (STO) (001) surface. The pattern consisted of 1 x 1 mu m square holes with sloped sides, fabricated on the STO (001) surface by electron beam lithography and Ar+ ion etching. Scanning electron and atomic force microscopy analyses demonstrated that the pit slopes had angles of 6.1 degrees-7.6 degrees, which were sufficient to limit the in-plane growth direction of the BFO at step edges on the STO surface, and thus control the domain structure. Lateral and vertical piezoresponse scanning force and transmission electron microscopy confirmed the artificial introduction of CDWs in the pit and showed that the sign of the CDWs could be reversed via ferroelectric polarization switching. This domain control technique based on a pit pattern provides a simple approach to the integration of ferroelectric DWs into functional devices. (C) 2019 The Japan Society of Applied Physics
机译：这项工作证明，使用凹陷图案化SRTIO3（STO）表面，通过域结构控制将带电域壁（CDW）引入到铁电BIFEO3（BFO）薄膜中。该图案由1×1μm平方孔组成，倾斜侧，通过电子束光刻和Ar +离子蚀刻在STO（001）表面上制造。扫描电子和原子力显微镜分析证明坑斜率具有6.1度-7.6度的角度，足以将BFO的面内生长方向限制在STO表面上的步进边缘，因此控制域结构。横向和垂直压电响应扫描力和透射电子显微镜证实了坑中的CDWS的人工引入，并显示CDW的符号可以通过铁电偏振切换反转。该基于凹坑模式的域控制技术提供了一种简单的方法，将铁电DW集成到功能装置中。 （c）2019年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第sl期|SLLB02.1-SLLB02.4|共4页
  • 作者

    Nakashima Seiji; Kimura Satoshi; Kurokawa Yuta; Fujisawa Hironori; Shimizu Masaru;

  • 作者单位

    Univ Hyogo Grad Sch Engn Dept Elect & Comp Sci 2167 Shosha Himeji Hyogo 6712201 Japan|Univ Hyogo Grad Sch Engn Res Ctr Nanomicro Struct Sci & Engn 2167 Shosha Himeji Hyogo 6712280 Japan|Univ Hyogo Adv Med Engn Ctr 2167 Shosha Himeji Hyogo 6712280 Japan;

    Univ Hyogo Grad Sch Engn Dept Elect & Comp Sci 2167 Shosha Himeji Hyogo 6712201 Japan;

    Univ Hyogo Grad Sch Engn Dept Elect & Comp Sci 2167 Shosha Himeji Hyogo 6712201 Japan;

    Univ Hyogo Grad Sch Engn Dept Elect & Comp Sci 2167 Shosha Himeji Hyogo 6712201 Japan|Univ Hyogo Grad Sch Engn Res Ctr Nanomicro Struct Sci & Engn 2167 Shosha Himeji Hyogo 6712280 Japan|Univ Hyogo Adv Med Engn Ctr 2167 Shosha Himeji Hyogo 6712280 Japan;

    Univ Hyogo Grad Sch Engn Dept Elect & Comp Sci 2167 Shosha Himeji Hyogo 6712201 Japan;

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