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首页> 外文期刊>Japanese journal of applied physics >Enhancement of the dielectric permittivity of (Nb_(1/2)In_(1/2))_(0.02)Ti_(0.98)O_2 single crystals at low temperatures due to (Nb + In) codoping
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Enhancement of the dielectric permittivity of (Nb_(1/2)In_(1/2))_(0.02)Ti_(0.98)O_2 single crystals at low temperatures due to (Nb + In) codoping

机译：（Nb + In）共掺杂导致（Nb_（1/2）In_（1/2））_（0.02）Ti_（0.98）O_2单晶在低温下的介电常数提高

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摘要

Dielectric measurements are performed on (Nb1/2In1/2)(0.02)Ti0.98O2 (NITO-2.0) single crystals grown by a floating zone method to address the nature of the colossal permittivity recently reported in (Nb + In) co-doped TiO2 ceramics. The colossal permittivity of the order of 10(5), which is also observed in the NITO-2.0 single crystals, disappears in the lowest temperature region, indicating an extrinsic contribution from thermally excited carriers to the colossal permittivity. Even at low temperatures where the thermally excited carriers are expected to be frozen out, a high permittivity of the order of 10(3) remains. This finding suggests that an intrinsic contribution from electron-pinned defect dipoles boosts the dielectric permittivity of TiO2. (C) 2017 The Japan Society of Applied Physics
机译：对通过浮区法生长的（Nb1 / 2In1 / 2）（0.02）Ti0.98O2（NITO-2.0）单晶进行介电测量，以解决最近在（Nb + In）共掺杂中报道的巨大介电常数的性质TiO2陶瓷。 NITO-2.0单晶中也观察到的大约10（5）的巨大介电常数在最低温度区域内消失，表明热激发载流子对巨大介电常数的外在贡献。即使在预期热激发的载流子会冻结的低温下，仍保持约10（3）的高介电常数。这一发现表明，电子固定缺陷偶极子的内在作用提高了TiO2的介电常数。 （C）2017日本应用物理学会

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