Observation of silicon carbide Schottky barrier diode under applied reverse bias using atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy

Uruma Takeshi; Satoh Nobuo; Yamamoto Hidekazu

首页> 外文期刊>Japanese journal of applied physics >Observation of silicon carbide Schottky barrier diode under applied reverse bias using atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy

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Observation of silicon carbide Schottky barrier diode under applied reverse bias using atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy

机译：使用原子力显微镜/开尔文探针力显微镜/扫描电容力显微镜观察施加反向偏压下的碳化硅肖特基势垒二极管

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We have observed a commercial silicon-carbide Schottky barrier diode (SiC-SBD) using our novel analysis system, in which atomic force microscopy (AFM) is combined with both Kelvin probe force microscopy (KFM; for surface-potential measurement) and scanning capacitance force microscopy (SCFM; for differential-capacitance measurement). The results obtained for the SiC-SBD under an applied reverse bias indicate both the scan area in the sample and a peak value of the SCFM signal in the region where the existence of trapped electrons is deduced from the KFM analysis. Thus, our measurement system can be used to examine commercial power devices; however, novel polishing procedures are required in order to investigate the Schottky contact region. (C) 2017 The Japan Society of Applied Physics

机译：我们已经使用我们的新型分析系统观察了商用碳化硅肖特基势垒二极管（SiC-SBD），其中原子力显微镜（AFM）与开尔文探针力显微镜（KFM；用于表面电势测量）和扫描电容相结合力显微镜（SCFM；用于差分电容测量）。在施加反向偏压下获得的SiC-SBD的结果既显示了样品的扫描区域，又显示了从KFM分析推断出存在俘获电子的区域中SCFM信号的峰值。因此，我们的测量系统可用于检查商用电源设备；然而，为了研究肖特基接触区域，需要新颖的抛光程序。（C）2017日本应用物理学会

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《Japanese journal of applied physics》 |2017年第8s1期|08LB05.1-08LB05.5|共5页
作者
Uruma Takeshi; Satoh Nobuo; Yamamoto Hidekazu;
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Chiba Inst Technol, Grad Sch Engn, Dept Elect Elect & Comp Engn, Narashino, Chiba 2700016, Japan;

Chiba Inst Technol, Fac Engn, Dept Elect Elect & Comp Engn, Narashino, Chiba 2700016, Japan;

Chiba Inst Technol, Fac Engn, Dept Elect Elect & Comp Engn, Narashino, Chiba 2700016, Japan;

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Observation of silicon carbide Schottky barrier diode under applied reverse bias using atomic force microscopy/Kelvin probe force microscopy/scanning capacitance force microscopy

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