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首页> 外文期刊>Japanese journal of applied physics >Conduction mechanism in highly doped beta-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes
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Conduction mechanism in highly doped beta-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes

机译：边缘界定的薄膜喂养生长方法生长的高掺杂β-Ga2O3（（2）over-bar01）单晶及其肖特基势垒二极管的导电机理

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摘要

Edge-defined fed-grown ((2) over bar 01) beta-Ga2O3 single crystals with high electron concentration of 3.9 x 10(18) cm(-3) at 300 K were characterized by Hall effect measurement, and Schottky barrier diodes have been demonstrated. Electron mobility was as high as 74cm(2)/(V.s) at 300K regardless of the high doping concentration. The electron concentration did not change substantially in the low temperature below 160 K. This properties can be explained by the two-band model due to the inter-band conduction. On the Schottky barrier diodes, the rectification characteristics were clearly observed, and the current density of 96.8 A/cm(2) at the forward voltage of 1.6V was obtained. (C) 2016 The Japan Society of Applied Physics
机译：通过霍尔效应测量表征了在300 K时具有3.9 x 10（18）cm（-3）的高电子浓度的边沿定义的生长（在棒01上的（2））β-Ga2O3单晶，并且肖特基势垒二极管具有被证明。不管高掺杂浓度如何，在300K时电子迁移率都高达74cm（2）/（V.s）。在低于160 K的低温下，电子浓度基本没有变化。由于带间传导，这种性质可以用两带模型来解释。在肖特基势垒二极管上，可以清楚地观察到整流特性，在正向电压为1.6V时获得96.8 A / cm（2）的电流密度。 （C）2016年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2016年第3期|030305.1-030305.4|共4页
  • 作者

    Oishi Toshiyuki; Harada Kazuya; Koga Yuta; Kasu Makoto;

  • 作者单位

    Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan;

    Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan;

    Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan;

    Saga Univ, Dept Elect & Elect Engn, Saga 8408502, Japan;

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