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首页> 外文期刊>Japanese journal of applied physics >Enhanced performance of GeSn source-pocket tunnel field-effect transistors for low-power applications
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Enhanced performance of GeSn source-pocket tunnel field-effect transistors for low-power applications

机译：GeSn源口袋型隧道场效应晶体管的低功率应用性能增强

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摘要

Germanium-tin (GeSn) source-pocket tunnel field-effect transistors (TFETs) are comprehensively investigated by numerical device simulations at low supply voltages. Device configurations with homo- and hetero-tunneling junctions (TJ) are analyzed and compared. It is shown that direct-gap GeSn alloys are favorable for increasing the source-pocket tunneling rate. Increasing the source Sn composition of the device may aid the on-state current increase, but the subthreshold swing (SS) is degraded because of the reduced band gap. At ultrascaled supply voltages, the GeSn hetero-TJ TFET with higher pocket Sn composition exhibits the best performance and SS, and the device performance can be further improved by increasing the Sn composition in the pocket region. These simulation results could be used to understand and optimize the performance of GeSn source-pocket TFETs, which are very promising electronic devices for low-power applications. (C) 2016 The Japan Society of Applied Physics.
机译：在低电源电压下，通过数值器件仿真对锗锡（GeSn）源口袋型隧道场效应晶体管（TFET）进行了全面研究。分析并比较了具有同形和异形隧道结（TJ）的设备配置。结果表明，直接间隙GeSn合金有利于提高源极-空穴隧穿速率。器件的源极Sn成分的增加可能有助于导通电流的增加，但是由于带隙的减小，亚阈值摆幅（SS）降低了。在超大规模电源电压下，具有较高口袋锡组成的GeSn异质TJ TFET表现出最佳的性能和SS，并且可以通过增加口袋区域中的锡成分来进一步改善器件性能。这些仿真结果可用于了解和优化GeSn源口袋型TFET的性能，这是低功耗应用中非常有前途的电子设备。 （C）2016年日本应用物理学会。

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  • 来源
    《Japanese journal of applied physics》 |2016年第7期|071201.1-071201.6|共6页
  • 作者

    Liu Lei; Liang Renrong; Wang Jing; Xu Jun;

  • 作者单位

    Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China;

    Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China;

    Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China;

    Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China;

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