Magnet-free uniform sputtering of dielectric film by RF and microwave power superposition

Sasai Kensuke; Hagihara Toshiya; Noda Tomonori; Suzuki Haruka; Toyoda Hirotaka

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Magnet-free uniform sputtering of dielectric film by RF and microwave power superposition

机译：射频和微波功率叠加的无磁铁均匀溅射介电膜

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A novel sputtering device that is free of magnets (magnet-free surface wave sputtering plasma: MF-SSP) is developed by combining a surface wave plasma and RF bias power. Low-pressure (<0.5 Pa) plasma sustainment is demonstrated by MF-SSP with a uniform sputter deposition rate with a deviation of less than 5% within an area of 10 x 10 cm(2). Highly oriented MgO films are deposited at a substrate temperature of 200 degrees C. (C) 2016 The Japan Society of Applied Physics

机译：通过结合表面波等离子体和RF偏置功率，开发了一种新型的无磁铁溅射装置（无磁体表面波溅射等离子体：MF-SSP）。 MF-SSP在10 x 10 cm（2）的区域内以均匀的溅射沉积速率证明了低压（<0.5 Pa）等离子体的均匀沉积速度，偏差小于5％。在衬底温度为200摄氏度的条件下沉积高取向MgO薄膜。（C）2016日本应用物理学会

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《Japanese journal of applied physics》 |2016年第8期|086202.1-086202.5|共5页
作者
Sasai Kensuke; Hagihara Toshiya; Noda Tomonori; Suzuki Haruka; Toyoda Hirotaka;
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Nagoya Univ, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan;

Nagoya Univ, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan;

Nagoya Univ, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan;

Nagoya Univ, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan;

Nagoya Univ, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan;

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Magnet-free uniform sputtering of dielectric film by RF and microwave power superposition

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