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首页> 外文期刊>Japanese journal of applied physics >Depth profile characterization technique for electron density in GaN films by infrared reflectance spectroscopy
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Depth profile characterization technique for electron density in GaN films by infrared reflectance spectroscopy

机译：GaN薄膜中电子密度的深度轮廓表征技术的红外反射光谱

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摘要

Infrared reflectance spectroscopy is a noncontact measurement method for carrier density and mobility. In this article, the model determination procedure of layer-type nonuniform electron distribution is investigated, since the spectrum fitting hitherto has been conducted on the basis of a multilayer model defined in advance. A simplified case of a high-electron-density GaN layer embedded in a GaN matrix is mainly studied. The following procedure is found to be applicable. The first step is the determination of the high-density layer position in the vicinity of the surface, in the middle region, or in the vicinity of the interface. This is followed by the specification of the sheet electron density and the layer thickness of the high-density region. It is found that this procedure is also applicable to the characterization of two-dimensional electron gases in the vicinity of AlGaN/GaN heterointerfaces. (C) 2016 The Japan Society of Applied Physics
机译：红外反射光谱是一种用于载流子密度和迁移率的非接触式测量方法。在本文中，研究了层型非均匀电子分布的模型确定过程，因为迄今为止的光谱拟合都是在预先定义的多层模型的基础上进行的。主要研究嵌入在GaN矩阵中的高电子密度GaN层的简化情况。发现以下过程适用。第一步是确定表面附近，中间区域或界面附近的高密度层位置。接下来是薄板电子密度和高密度区域的层厚度的说明。发现该程序也适用于表征AlGaN / GaN异质界面附近的二维电子气。 （C）2016年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2016年第5s期|05FH02.1-05FH02.6|共6页
  • 作者

    Kamijoh Takaaki; Ma Bei; Morita Ken; Ishitani Yoshihiro;

  • 作者单位

    Chiba Univ, Grad Sch Elect & Elect Engn, Chiba 2638522, Japan;

    Chiba Univ, Grad Sch Elect & Elect Engn, Chiba 2638522, Japan;

    Chiba Univ, Grad Sch Elect & Elect Engn, Chiba 2638522, Japan;

    Chiba Univ, Grad Sch Elect & Elect Engn, Chiba 2638522, Japan;

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