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首页> 外文期刊>Japanese journal of applied physics >Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10 nm tunneling field-effect transistors
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Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10 nm tunneling field-effect transistors

机译：双垫片电介质对10 nm以下隧穿场效应晶体管的低功率和高速性能的影响

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摘要

In this paper, we propose and investigate a dual-spacer dielectric structure for realizing a sub-10 nm tunneling field-effect transistors (TFET) with excellent low-power (LP) and switching performance. The effects of the dual-spacer dielectric were assessed by analyzing the direct current (DC) and radio frequency (RF) performance of the GaAs0.5Sb0.5/In0.53Ga0.47As heterojunction-based short channel TFETs. The dual-spacer dielectric that consists of hafnium oxide (HfO2) and silicon dioxide (SiO2) raises an energy-band on drain-side because of the fringe field induced by the high-k spacer dielectric HfO2. The raised energy-band suppresses direct band-to-band tunneling (BBT) through the channel region and drain-induced barrier thinning (DIBT) phenomenon with improvement in the off-state current (I-off) and subthreshold swing (S). The dual-spacer dielectric also influences total gate capacitance (C-gg) because the HfO2 in the dual-spacer dielectric increases out-fringe capacitance (C-of) in gate-to-drain capacitance (C-gd). Although the proposed TFET has a high C-gd, the optimized TFET with the HfO2 length (Ldual-spacer) of 30 nm achieves a lower intrinsic delay time (t), a higher cut-off frequency (f(T)), and a higher maximum oscillation frequency (f(max)) owing to higher current performance and smaller gate-to-source capacitance (C-gs). (C) 2016 The Japan Society of Applied Physics
机译：在本文中，我们提出并研究了一种双垫片介电结构，以实现具有出色的低功耗（LP）和开关性能​​的亚10纳米隧穿场效应晶体管（TFET）。通过分析基于异质结的GaAs0.5Sb0.5 / In0.53Ga0.47As短沟道TFET的直流（DC）和射频（RF）性能，评估了双垫片电介质的影响。由于高k间隔电介质HfO2产生的边缘场，由氧化ha（HfO2）和二氧化硅（SiO2）组成的双间隔电介质提高了漏极侧的能带。升高的能带抑制了通过沟道区域的直接带间隧穿（BBT）和漏极诱导的势垒变薄（DIBT）现象，并改善了截止状态电流（I-off）和亚阈值摆幅（S）。双间隔物电介质还会影响总栅极电容（C-gg），因为双间隔物电介质中的HfO2会增加栅极至漏极电容（C-gd）的边缘电容（C-of）。尽管建议的TFET具有较高的C-gd，但HfO2长度（Ldual-spacer）为30 nm的优化TFET可以实现更低的固有延迟时间（t），更高的截止频率（f（T））和由于较高的电流性能和较小的栅极至源极电容（C-gs），因此具有较高的最大振荡频率（f（max））。 （C）2016年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2016年第6s1期|06GG02.1-06GG02.5|共5页
  • 作者

    Yoon Young Jun; Seo Jae Hwa; Cho Seongjae; Kwon Hyuck-In; Lee Jung-Hee; Kang In Man;

  • 作者单位

    Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea;

    Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea;

    Gachon Univ, Dept Elect Engn, Songnam 461701, Gyeonggi, South Korea;

    Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea;

    Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea;

    Kyungpook Natl Univ, Sch Elect Engn, Taegu 702701, South Korea;

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