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首页> 外文期刊>Japanese journal of applied physics >Fabrication of hydrogenated amorphous silicon carbide films by decomposition of hexamethyldisilane with microwave discharge flow of Ar
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Fabrication of hydrogenated amorphous silicon carbide films by decomposition of hexamethyldisilane with microwave discharge flow of Ar

机译:微波放电Ar流分解六甲基乙硅烷制备氢化非晶碳化硅膜

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摘要

Hydrogenated amorphous silicon carbide films have been fabricated by the decomposition of hexamethyldisilane with a microwave discharge flow of Ar. Mechanically hard films were obtained by applying radio-frequency (RF) bias voltages to the substrate. The atomic compositions of the films were analyzed by a combination of Rutherford backscattering and elastic recoil detection, X-ray photoelectron spectroscopy (XPS), and glow discharge optical emission spectroscopy. The chemical structure was analyzed by carbon-K near-edge X-ray absorption fine structure spectroscopy, high-resolution XPS, and Fourier transform infrared absorption spectroscopy. The structural changes upon the application of RF bias were investigated, and the concentration of O atoms near the film surface was found to play a key role in the mechanical hardness of the present films. (C) 2016 The Japan Society of Applied Physics
机译:氢化非晶硅碳化物膜是通过六甲基乙硅烷在Ar的微波放电作用下分解而制得的。通过将射频(RF)偏置电压施加到基板上来获得机械硬膜。薄膜的原子组成通过卢瑟福背散射和弹性反冲检测,X射线光电子能谱(XPS)和辉光放电光发射光谱相结合进行分析。通过碳-K近缘X射线吸收精细结构光谱,高分辨率XPS和傅里叶变换红外吸收光谱对化学结构进行了分析。研究了在施加RF偏压时的结构变化,发现膜表面附近的O原子的浓度在本膜的机械硬度中起关键作用。 (C)2016年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2016年第6s2期|06HC01.1-06HC01.9|共9页
  • 作者单位

    Nagaoka Univ Technol, Nagaoka, Niigata 9402188, Japan;

    Nagaoka Univ Technol, Nagaoka, Niigata 9402188, Japan;

    Nagaoka Univ Technol, Nagaoka, Niigata 9402188, Japan;

    Univ Hyogo, Lab Adv Sci & Technol Inst, Kamigori, Hyogo 6781205, Japan;

    Univ Hyogo, Lab Adv Sci & Technol Inst, Kamigori, Hyogo 6781205, Japan;

    Nagaoka Univ Technol, Nagaoka, Niigata 9402188, Japan;

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