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Nano-patterning on soluble block copolymer polyimide by nanoimprint

机译:纳米压印法在可溶性嵌段共聚物聚酰亚胺上进行纳米构图

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摘要

It has been difficult to fabricate high-resolution patterns in polyimide film because a polyimide is difficult to dissolve out or to etch. In this paper, polyimide-based polymer patterning with several hundred nanometers took on the challenge of nanoimprinting on soluble block copolymer polyimide (SBC-PI) at a relatively low temperature of 130 degrees C. The high-resolution patterns with 118 nm in width and high-aspect-ratio patterns of 6.5 were successfully fabricated without any defects. After hard-baking at 200 degrees C to enhance the thermal stability, the pattern deformation ratios for height and width were less than approximately 10% for the patterns in a width of 100 nm. (C) 2015 The Japan Society of Applied Physics
机译:由于聚酰亚胺难以溶解或蚀刻,因此难以在聚酰亚胺膜中制造高分辨率图案。本文中,几百纳米的聚酰亚胺基聚合物图案在130℃的相对低温下承受了在可溶性嵌段共聚物聚酰亚胺(SBC-PI)上进行纳米压印的挑战。高分辨率的图案具有118 nm的宽度和成功制作了6.5的高纵横比图案,没有任何缺陷。在200℃下硬烘烤以增强热稳定性之后,对于宽度为100nm的图案,高度和宽度的图案变形率小于约10%。 (C)2015年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2015年第8期|088002.1-088002.3|共3页
  • 作者单位

    Natl Inst Adv Ind Sci & Technol, Res Ctr UMEMSME, Tsukuba, Ibaraki 3058564, Japan;

    Natl Inst Adv Ind Sci & Technol, Res Ctr UMEMSME, Tsukuba, Ibaraki 3058564, Japan;

    Natl Inst Adv Ind Sci & Technol, Res Ctr UMEMSME, Tsukuba, Ibaraki 3058564, Japan;

    Natl Inst Adv Ind Sci & Technol, Res Ctr UMEMSME, Tsukuba, Ibaraki 3058564, Japan;

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