Fabrication and characterization of (110)-oriented (Ba-0.5,Sr-0.5)TiO3 thin films using PdO//Pd buffer layer

Oshima Naoya; Uchiyama Kiyoshi; Ehara Yoshitaka; Oikawa Takahiro; Tanaka Hiroki; Sato Tomoya; Uchida Hiroshi; Yamada Tomoaki; Funakubo Hiroshi

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Fabrication and characterization of (110)-oriented (Ba-0.5,Sr-0.5)TiO3 thin films using PdO//Pd buffer layer

机译：使用PdO // Pd缓冲层的（110）取向（Ba-0.5，Sr-0.5）TiO3薄膜的制备和表征

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A new orientation control method for depositing (110)-oriented perovskite thin films was demonstrated using a (101)PdO//(111)Pd buffer layer on (100) Si substrates, which is widely used in integrated ferroelectric and dielectric applications. The (101)-oriented PdO was obtained by oxidizing (111) Pd films deposited on a (111)Pt/TiOx/SiO2/(100)Si substrate and (110)-oriented perovskites including SrRuO3 and (Ba-0.5,Sr-0.5)TiO3 (BST) were obtained on (101)PdO by the RF magnetron sputtering method. Although the BST films deposited at 500 degrees C were not crystallized, the BST films deposited above 600 degrees C are fully crystallized and the (110)-orientation is dominant. The (110)-oriented BST thin film showed good dielectric property with high dielectric constant (>600) at 0 kV/cm and high tunability (>50% at +/- 200 kV/cm). Comparing this dielectric property with those of other oriented BST films, both the dielectric constant and the tunability tend to decrease in the order of (111)-, (100)-, and (110)-preferred orientations. (C) 2015 The Japan Society of Applied Physics

机译：通过在（100）Si衬底上使用（101）PdO //（111）Pd缓冲层，证明了一种用于沉积（110）取向钙钛矿薄膜的新取向控制方法，该方法广泛用于集成铁电和介电应用中。通过氧化沉积在（111）Pt / TiOx / SiO2 /（100）Si衬底上的（111）Pd膜和包括SrRuO3和（Ba-0.5，Sr-通过射频磁控溅射法在（101）PdO上获得0.5）TiO3（BST）。尽管在500摄氏度下沉积的BST膜未结晶，但在600摄氏度以上沉积的BST膜则完全结晶，并且（110）取向是主要的。（110）取向的BST薄膜显示出良好的介电性能，在0 kV / cm时具有高介电常数（> 600）和高可调性（在+/- 200 kV / cm时> 50％）。将该介电性能与其他取向的BST膜的介电性能进行比较，介电常数和可调谐性都倾向于以（111）-，（100）-和（110）-优选取向的顺序降低。（C）2015年日本应用物理学会

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来源
《Japanese journal of applied physics》 |2015年第10s期|10NA15.1-10NA15.4|共4页
作者
Oshima Naoya; Uchiyama Kiyoshi; Ehara Yoshitaka; Oikawa Takahiro; Tanaka Hiroki; Sato Tomoya; Uchida Hiroshi; Yamada Tomoaki; Funakubo Hiroshi;
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Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan;

Tsuruoka Coll, Natl Inst Technol, Dept Creat Engn, Tsuruoka, Yamagata 9978511, Japan;

Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan;

Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan;

Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan;

Tsuruoka Coll, Natl Inst Technol, Dept Creat Engn, Tsuruoka, Yamagata 9978511, Japan;

Sophia Univ, Dept Mat, Tokyo 1028554, Japan|Sophia Univ, Life Sci Coll, Tokyo 1028554, Japan;

Nagoya Univ, Dept Mat Phys & Energy Engn, Nagoya, Aichi 4648603, Japan;

Tokyo Inst Technol, Dept Innovat & Engn Mat, Yokohama, Kanagawa 2268502, Japan;

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Fabrication and characterization of (110)-oriented (Ba-0.5,Sr-0.5)TiO3 thin films using PdO//Pd buffer layer

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