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首页> 外文期刊>Japanese journal of applied physics >Extreme ultraviolet mask observations using a coherent extreme ultraviolet scatterometry microscope with a high-harmonic-generation source
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Extreme ultraviolet mask observations using a coherent extreme ultraviolet scatterometry microscope with a high-harmonic-generation source

机译：使用具有高谐波产生源的相干极端紫外线散射显微镜观察极端紫外线掩模

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摘要

In extreme ultraviolet (EUV) lithography, the three-dimensional structure of an EUV mask, which has an absorber layer and a Mo/Si multilayer on a glass substrate, strongly affects the EUV phase. We have developed a coherent EUV scatterometry microscope (CSM) to observe EUV patterns with a quantitative phase contrast based on the coherent-diffraction-imaging method, which is a simple system without an objective. A coherent stand-alone high-harmonic-generation (HHG) EUV source has been developed for practical use. Although the throughput of the relay optics in the previous study was insufficient to compensate for the fluctuation of the beam position, herein the beam position is stabilized and the relay optics are upgraded, increasing the throughput of the EUV power 130-fold. Consequently, the detection time for the same defect size is markedly reduced from 1000 to 1 s. Furthermore, a 52 x 52 nm(2) absorber defect is detected in 10 s. (C) 2015 The Japan Society of Applied Physics
机译：在极紫外（EUV）光刻中，EUV掩模的三维结构（在玻璃基板上具有吸收层和Mo / Si多层结构）会严重影响EUV相。我们已经开发了一种相干EUV散射显微镜（CSM），以基于相干衍射成像方法的定量相衬观察EUV模式，这是一个没有目标的简单系统。已开发出一种相干的独立高谐波产生（HHG）EUV源，以供实际使用。尽管在先前的研究中中继光学器件的吞吐量不足以补偿光束位置的波动，但此处光束位置稳定且中继光学器件已升级，从而将EUV功率的吞吐量提高了130倍。因此，相同缺陷尺寸的检测时间从1000秒显着减少。此外，在10 s内检测到52 x 52 nm（2）的吸收体缺陷。 （C）2015年日本应用物理学会

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    《Japanese journal of applied physics》 |2015年第6s1期|06FC01.1-06FC01.6|共6页
  • 作者

    Fujino Takahiro; Tanaka Yusuke; Harada Tetsuo; Nagata Yutaka; Watanabe Takeo; Kinoshita Hiroo;

  • 作者单位

    Univ Hyogo, Lab Adv Sci & Technol Ind, Ctr EUV Lithog, Kamigori, Hyogo 6781205, Japan;

    Univ Hyogo, Lab Adv Sci & Technol Ind, Ctr EUV Lithog, Kamigori, Hyogo 6781205, Japan;

    Univ Hyogo, Lab Adv Sci & Technol Ind, Ctr EUV Lithog, Kamigori, Hyogo 6781205, Japan;

    Univ Hyogo, Lab Adv Sci & Technol Ind, Ctr EUV Lithog, Kamigori, Hyogo 6781205, Japan|RIKEN, Laser Technol Lab, Wako, Saitama 3510198, Japan;

    Univ Hyogo, Lab Adv Sci & Technol Ind, Ctr EUV Lithog, Kamigori, Hyogo 6781205, Japan;

    Univ Hyogo, Lab Adv Sci & Technol Ind, Ctr EUV Lithog, Kamigori, Hyogo 6781205, Japan;

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