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首页> 外文期刊>Japanese journal of applied physics >High efficiency a-Si:H/a-SiGe:H tandem solar cells fabricated with the combination of V- and U-shaped band gap profiling techniques
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High efficiency a-Si:H/a-SiGe:H tandem solar cells fabricated with the combination of V- and U-shaped band gap profiling techniques

机译：结合V型和U型带隙轮廓分析技术制造的高效a-Si：H / a-SiGe：H串联太阳能电池

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摘要

Hydrogenated amorphous silicon germanium (a-SiGe:H) films prepared by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) using a mixture of SiH4, H-2, and GeH4 were investigated for their use as the bottom cell of amorphous silicon/amorphous silicon germanium (a-Si:H/a-SiGe:H) tandem solar cell structures. Narrow optical band gaps (E-opt) in the range of 1.5 to 1.6 eV were obtained by varying the GeH4/(SiH4 + GeH4) gas flow rate ratio in low-temperature deposition. The a-SiGe:H films deposited with various GeH4/(SiH4 + GeH4) gas flow rate ratios were used as intrinsic layers for the a-Si:H/a-SiGe:H tandem solar cells with different graded band gaps:V-, VU-, and U-shapes. It was found that using the VU-shape improves the solar cell efficiency owing to a higher J(sc) when compared with using V-shape. The VU-shape's V-oc and FF are also improved when compared with the U-shape's V-oc and FF. As a result, a high efficiency of 11.0% (V-oc = 1.74 V, J(sc) = 9.07 mA/cm(2), and FF = 0.70) was successfully achieved with the solar cells fabricated using the VU-shape graded band gap technique. (C) 2015 The Japan Society of Applied Physics
机译：研究了通过使用SiH4，H-2和GeH4的混合物通过非常高频等离子体增强化学气相沉积（VHF-PECVD）制备的氢化非晶硅锗（a-SiGe：H）膜作为氢的底部电池的用途非晶硅/非晶硅锗（a-Si：H / a-SiGe：H）串联太阳能电池结构。通过改变低温沉积中的GeH4 /（SiH4 + GeH4）气体流速比，可获得1.5至1.6 eV的窄光学带隙（E-opt）。以不同的GeH4 /（SiH4 + GeH4）气体流量比沉积的a-SiGe：H膜用作具有不同梯度带隙：V-的a-Si：H / a-SiGe：H串联太阳能电池的本征层，VU和U形。已经发现，与使用V形相比，使用VU形由于较高的J（sc）而提高了太阳能电池的效率。与U形的V-oc和FF相比，VU形的V-oc和FF也得到了改善。结果，使用VU形状渐变的太阳能电池成功地实现了11.0％的高效率（V-oc = 1.74 V，J（sc）= 9.07 mA / cm（2）和FF ​​= 0.70）。带隙技术。 （C）2015年日本应用物理学会

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