Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors

Chika Tanaka; Keiko Abe; Hiroki Noguchi; Kumiko Nomura; Kazutaka Ikegami; Shinobu Fujita

首页> 外文期刊>Japanese journal of applied physics >Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors

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Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors

机译：具有垂直自旋扭矩传递磁性随机存取存储单元和最少数量晶体管的常关型非易失性静态随机存取存储器

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In this paper, we present a novel nonvolatile-random access memory (RAM) cell design based on a "normally-off memory architecture" using a perpendicular spin torque transfer-magnetic random access memory (STT-MRAM) based on a four-transistors static random access memory (SRAM) in order to reduce the operating power of mobile processors. After the cell design concept and basic operation are proposed, a stable and reliable operation for read/write is confirmed by circuit simulation.

机译：在本文中，我们提出了一种基于“常关存储体系结构”的新颖的非易失性随机存取存储器（RAM）单元设计，该设计使用了基于四晶体管的垂直自旋扭矩传递磁性随机存取存储器（STT-MRAM）静态随机存取存储器（SRAM），以降低移动处理器的运行能力。提出单元设计概念和基本操作后，通过电路仿真确定了稳定可靠的读/写操作。

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《Japanese journal of applied physics》 |2014年第4s期|04EM07.1-04EM07.4|共4页
作者
Chika Tanaka; Keiko Abe; Hiroki Noguchi; Kumiko Nomura; Kazutaka Ikegami; Shinobu Fujita;
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Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan;

Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan;

Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan;

Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan;

Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan;

Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan;

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4. Nonvolatile static random access memory based on spin-transistor architecture [C] . Yusuke Shuto, Shuuichirou Yamamoto, Satoshi Sugahara Annual Conference on Magnetism and Magnetic Materials . 2009

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5. Nanoscale nonvolatile memory circuit design using emerging spin transfer torque magnetic random access memory [D] . Vemula, Lohith Kumar. 2016

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7. Numerical Simulation of Static Noise Margin for a Six-Transistor Static Random Access Memory Cell with 32nm Fin-Typed Field Effect Transistors [O] . Yiming Li, Chih-Hong Hwang, Shao-Ming Yu 2007

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机译：利用铁电晶体管的静态随机存取存储单元的I-V特性。

Normally-off type nonvolatile static random access memory with perpendicular spin torque transfer-magnetic random access memory cells and smallest number of transistors

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