Carrier generation mechanism and effect of tantalum-doping in transparent conductive amorphous SnO_2 thin films

著录项

• 来源
  《Japanese journal of applied physics》 |2014年第5s1期|05FX04.1-05FX04.4|共4页
• 作者

  Shoichiro Nakao; Yasushi Hirose; Tomoteru Fukumura; Tetsuya Hasegawa;

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• 作者单位

  Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012, Japan,Japan Science and Technology Agency, CREST, Bunkyo, Tokyo 113-0033, Japan;

  Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012, Japan,Japan Science and Technology Agency, CREST, Bunkyo, Tokyo 113-0033, Japan,Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan;

  Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012, Japan,Japan Science and Technology Agency, CREST, Bunkyo, Tokyo 113-0033, Japan,Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan;

  Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012, Japan,Japan Science and Technology Agency, CREST, Bunkyo, Tokyo 113-0033, Japan,Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan;

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• 正文语种 eng
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