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首页> 外文期刊>Japanese journal of applied physics >Analysis of channel electrons scattered in each region of silicon nanodiode at low drain voltage using nonequilibrium Green's function approach
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Analysis of channel electrons scattered in each region of silicon nanodiode at low drain voltage using nonequilibrium Green's function approach

机译：使用非平衡格林函数方法分析低漏极电压下分散在硅纳米二极管每个区域中的沟道电子

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摘要

We analyzed channel electrons caused by scattering on the drain current of a silicon nanodiode. Electrons in the channel region are classified by the scattering positions: the source, channel, and drain regions. We focused our attention on the operation in a low-voltage range to study ultralow-power operation. To analyze electron transport in the device, we employed the nonequilibrium Green's function (NEGF) approach, which takes a complete quantum effect into consideration. It was found that channel electrons backscattered from the drain region cause a negative drain current when the drain voltage decreases. However, scattered channel electrons contribute only slightly to the drain current owing to the presence of substantial ballistic channel electrons, although the average velocity of scattered channel electrons is as large as that of ballistic channel electrons in a low-drain-voltage range. This result is beneficial for the development of future ultralow-power devices.
机译：我们分析了由硅纳米二极管的漏极电流上的散射引起的沟道电子。沟道区中的电子按散射位置分类：源极区，沟道区和漏极区。我们将注意力集中在低压范围内的操作上，以研究超低功耗操作。为了分析器件中的电子传输，我们采用了非平衡格林函数（NEGF）方法，该方法考虑了完整的量子效应。已经发现，当漏极电压降低时，从漏极区反向散射的沟道电子会引起负的漏极电流。然而，尽管在低漏极电压范围内，散射沟道电子的平均速度与弹道沟道电子的平均速度一样大，但是由于存在大量的弹道沟道电子，因此散射沟道电子仅对漏极电流有很小的贡献。该结果对于未来超低功率器件的开发是有益的。

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  • 来源
    《Japanese journal of applied physics》 |2014年第6s期|06JE13.1-06JE13.5|共5页
  • 作者

    Toshiyuki Tsutsumi; Kazutaka Tomizawa;

  • 作者单位

    Department of Computer Science, School of Science and Technology Meiji University, Kawasaki 214-8571, Japan;

    Department of Computer Science, School of Science and Technology Meiji University, Kawasaki 214-8571, Japan;

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