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首页> 外文期刊>Japanese journal of applied physics >Efficiency Improvement of 630 nm AIGalnP Light-Emitting Diodes based on AIGaAs Bottom Window
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Efficiency Improvement of 630 nm AIGalnP Light-Emitting Diodes based on AIGaAs Bottom Window

机译：基于AIGaAs底部窗口的630 nm AIGalnP发光二极管的效率提高

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摘要

Metal organic chemical vapor deposition (MOCVD) based aluminum gallium arsenide (AIGaAs) used as the bottom window (BW), which was inserted between the light-emitting diode (LED) structure and the absorbing substrate, has been proposed to improve the extraction efficiency of 630 nm AIGalnP LEDs. In an AIGalnP LED with this AIGaAs BW, enhanced light extraction efficiency was observed, as some of the light emitted from the active region to the absorbing substrate could pass out of the LED through the BW. In addition, it was found that a output power of 8 mW was obtained from an AIGalnP LED with both a BW and a distribution Bragg reflector (DBR), a nearly two fold improvement of over 4.2 mW that was obtained from a conventional one at an injection current of 80 mA.
机译：已经提出了将金属有机化学气相沉积（MOCVD）基的砷化铝镓铝（AIGaAs）用作底部窗口（BW），并将其插入发光二极管（LED）结构和吸收性基板之间，以提高提取效率630 nm AIGalnP LED。在具有该AIGaAs BW的AIGalnP LED中，观察到增强的光提取效率，因为从有源区发射到吸收衬底的某些光可能会通过BW射出LED。此外，还发现从具有BW和分布布拉格反射器（DBR）的AIGalnP LED获得了8 mW的输出功率，与传统LED相比，其输出功率提高了近4.2倍，是4.2 mW的两倍。注入电流为80 mA。

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  • 来源
    《Japanese journal of applied physics》 |2013年第10issue1期|102101.1-102101.4|共4页
  • 作者

    Hyung Joo Lee; Young Jin Kim; Seong Un Kim; Ju Ung Jo; Choong Hun Lee; Jae Hoon Kim; Su Chang Ann;

  • 作者单位

    EPI Technology Team 2, AUK Corporation, Iksan, Jeonbuk 513-5, Korea;

    EPI Technology Team 2, AUK Corporation, Iksan, Jeonbuk 513-5, Korea;

    EPI Technology Team 2, AUK Corporation, Iksan, Jeonbuk 513-5, Korea;

    TV Advanced Mechanic Team 3, LG Electronics, Seoul 135-860, Korea;

    Wonkwang University, Iksan, Jeonbuk 570-749, Korea;

    Wonkwang University, Iksan, Jeonbuk 570-749, Korea;

    Korea Photonic Technology Institute, Gwangju 500-460, Korea;

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