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首页> 外文期刊>Japanese journal of applied physics >Influence of Different Annealing Ambients on the Properties of Zinc Sulfide Prepared by Atomic Layer Deposition
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Influence of Different Annealing Ambients on the Properties of Zinc Sulfide Prepared by Atomic Layer Deposition

机译：不同退火环境对原子层沉积制备硫化锌性能的影响

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摘要

The effects of different post annealing ambients (vacuum, O_2, and H_2S gases) on the chemical, structural, and optical properties of zinc sulfide (ZnS) thin films prepared by atomic layer deposition (ALD) were investigated. Diethylzinc [DEZ, Zn(C_2H_5)_2] and H_2S gas were used as precursor and reactant gas, respectively. Compared to as-deposited 50-nm-thick ZnS film, the optical energy band gap (E_g) of ZnS annealed under vacuum and H_2S conditions increased from 3.73 to 3.85 eV, while it decreased down to 3.23 eV for the O_2 annealing case. The change in the £g of the thicker ZnS is similar to that of the thinner ZnS case. This behavior is related to the change in the Zn to S ratio. The vacuum and H_2S anneals increases the Zn/S ratio, leading to higher Zn interstitial defects or S vacancy sites in the films. X-ray diffraction analysis reveals that ZnS thin film has a preferred orientation of hexagonal wurtizte (002) and cubic zinc blend (111) at ～28.2°, and its grain size changes in a range from 18.79 to 28.14nm after annealing. However, for O_2 annealing, the patterns of both the newly formed ZnO phase and the reduced ZnS phase appear at 34.04°. This result suggests that change in the composition and crystal structure during the process significantly affects the optical properties of ZnS thin film, which should be taken into consideration in searching for an alternative buffer layer for Cu_2lnGaSe(S)_4 (CIGS) thin film solar cell systems.
机译：研究了不同的退火后环境（真空，O_2和H_2S气体）对通过原子层沉积（ALD）制备的硫化锌（ZnS）薄膜的化学，结构和光学性质的影响。二乙基锌[DEZ，Zn（C_2H_5）_2]和H_2S气体分别用作前驱气体和反应气体。与沉积的50nm厚的ZnS薄膜相比，在真空和H_2S条件下退火的ZnS的光能带隙（E_g）从3.73 eV增加到3.85 eV，而在O_2退火的情况下降低到3.23 eV。较厚的ZnS的£g变化与较薄的ZnS情况相似。此行为与Zn / S比的变化有关。真空和H_2S退火提高了Zn / S比，从而导致薄膜中较高的Zn间隙缺陷或S空位。 X射线衍射分析表明，ZnS薄膜在〜28.2°处具有较好的六方晶状体（002）和立方锌混合物（111）取向，退火后其晶粒尺寸在18.79至28.14nm范围内变化。然而，对于O_2退火，新形成的ZnO相和还原的ZnS相的图形都出现在34.04°。该结果表明，在此过程中组成和晶体结构的变化会显着影响ZnS薄膜的光学性能，在寻找Cu_2InGaSe（S）_4（CIGS）薄膜太阳能电池的替代缓冲层时应考虑这一点。系统。

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  • 来源
    《Japanese journal of applied physics》 |2013年第10issue2期|10MB19.1-10MB19.5|共5页
  • 作者

    Dongjun Yoo; Seung Chan Heo; Moon Suk Choi; Dohyung Kim; Chulwon Chung; Hag Young Choi; Hyeongtag Jeon; Changhwan Choi;

  • 作者单位

    Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea;

    Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea;

    Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea;

    Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea;

    Department of Energy Engineering, Hanyang University, Seoul 133-791, Republic of Korea;

    Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea;

    Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea;

    Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea;

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