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首页> 外文期刊>Japanese journal of applied physics >Design of Spin Polarization Analyzer using Transverse-Longitudinal Correlation in Resistivities Induced by Spin-Orbit Interaction
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Design of Spin Polarization Analyzer using Transverse-Longitudinal Correlation in Resistivities Induced by Spin-Orbit Interaction

机译：利用自旋轨道相互作用引起的电阻率中的横向-纵向相关性的自旋极化分析仪的设计

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摘要

We have theoretically studied a methodology for the measurement of the degree of spin polarization (P) in metals as well as semiconductors. Our principle is based on the correlation existing between transverse resistivity (ρ_(yx)) and longitudinal resistivity (ρ_(xx)), both influenced by transverse scattering due to a spin-orbit interaction (SOI) as well as longitudinal scattering due to usual mechanisms. Our spin polarization analyzer employs an unknown polarization conductor as a source electrode from which spin-polarized electrons are injected into a nonmagnetic (NM) channel region. The channel length is set to be much smaller than its spin diffusion length so that ρ_(yx) and ρ_(xx) in the NM region, both complementarily influenced by carrier spin polarization, would be measured to obtain the P value. Also, application to OR and XOR logic gates are discussed on the basis of our spin polarization analyzer.
机译：我们在理论上研究了一种测量金属以及半导体中自旋极化度（P）的方法。我们的原理基于横向电阻率（ρ_（yx））和纵向电阻率（ρ_（xx））之间存在的相关性，两者都受自旋轨道相互作用（SOI）引起的横向散射以及通常引起的纵向散射的影响机制。我们的自旋极化分析仪采用未知极化导体作为源电极，自旋极化电子从该电极注入到非磁性（NM）沟道区域。沟道长度被设置为比其自旋扩散长度小得多，使得将测量NM区域中的ρ_（yx）和ρ_（xx），这两个互补地受载流子自旋极化的影响，以获得P值。此外，在我们的自旋极化分析仪的基础上，讨论了对OR和XOR逻辑门的应用。

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  • 来源
    《Japanese journal of applied physics》 |2013年第1issue1期|013004.1-013004.7|共7页
  • 作者

    Masamichi Sakai; Koichi Kakizaki; Shigehiko Hasegawa; Akira Kitajima; Akihiro Oshima; Hiroyuki Awano;

  • 作者单位

    Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan;

    Division of Material Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan;

    The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan;

    The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan;

    The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan;

    Information Storage Materials Laboratory, Toyota Technological Institute, Nagoya 488-8511, Japan;

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