Hot-Wire Chemical Vapor Deposition of Few-Layer Graphene on Copper Substrates

Victor-Manuel Freire Soler; Jordi Badia-Canal; Carles Corbella Roca; Esther Pascual Miralles; Enric Bertran Serra; Jose-Luis Andujar Bella

首页> 外文期刊>Japanese journal of applied physics >Hot-Wire Chemical Vapor Deposition of Few-Layer Graphene on Copper Substrates

【24h】

Hot-Wire Chemical Vapor Deposition of Few-Layer Graphene on Copper Substrates

机译：铜基底上几层石墨烯的热线化学气相沉积

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Chemical vapor deposition (CVD) of graphene on copper is an efficient technology for producing high-quality graphene for large areas. The objective of this work is to deposit graphene/few-layer graphene (FLG) using different types of copper substrate by a new hot-wire CVD process. We carried out the processes at temperatures below 1000℃ with acetylene (C_2H_2) as a precursor gas. After a general characterization of the samples, the results mostly indicate the formation of FLG on copper samples by this method. Nevertheless, the presence of pure, crystalline, and sufficiently flat surfaces is needed for depositing high-quality graphene layers.

机译：石墨烯在铜上的化学气相沉积（CVD）是一种用于大面积生产高质量石墨烯的有效技术。这项工作的目的是通过新的热线CVD工艺使用不同类型的铜基板沉积石墨烯/几层石墨烯（FLG）。我们在低于1000℃的温度下以乙炔（C_2H_2）为前驱体气体进行了该工艺。对样品进行一般性表征后，结果主要表明通过这种方法在铜样品上形成了FLG。然而，为了沉积高质量的石墨烯层，需要存在纯净，结晶且足够平坦的表面。

著录项

来源
《Japanese journal of applied physics》 |2013年第1issue2期|01AK02.1-01AK02.6|共6页
作者
Victor-Manuel Freire Soler; Jordi Badia-Canal; Carles Corbella Roca; Esther Pascual Miralles; Enric Bertran Serra; Jose-Luis Andujar Bella;
展开▼
作者单位

FEMAN Group, IN2 UB, Departament de Ffsica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, E08028 Barcelona, Spain;

FEMAN Group, IN2 UB, Departament de Ffsica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, E08028 Barcelona, Spain;

FEMAN Group, IN2 UB, Departament de Ffsica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, E08028 Barcelona, Spain;

FEMAN Group, IN2 UB, Departament de Ffsica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, E08028 Barcelona, Spain;

FEMAN Group, IN2 UB, Departament de Ffsica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, E08028 Barcelona, Spain;

FEMAN Group, IN2 UB, Departament de Ffsica Aplicada i Optica, Universitat de Barcelona, Marti i Franques 1, E08028 Barcelona, Spain;

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Deposition of Thermal and Hot-Wire Chemical Vapor Deposition Copper Thin Films on Patterned Substrates [J] . G. Papadimitropoulos, D. Davazoglou Journal of nanoscience and nanotechnology . 2011,第9期

机译：在有图案的基板上沉积热和热线化学气相沉积铜薄膜
2. Mechanical and piezoresistive properties of thin silicon films deposited by plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition at low substrate temperatures [J] . J. Gaspar, A. Gualdino, B. Lemke, Journal of Applied Physics . 2012,第2期

机译：在低基板温度下通过等离子体增强化学气相沉积和热线化学气相沉积沉积的薄膜的机械和压阻特性
3. Investigation of Thermal and Hot-Wire Chemical Vapor Deposition Copper Thin Films on TiN Substrates Using CupraSelect as Precursor [J] . G. Papadimitropoulos, D. Davazoglou Journal of nanoscience and nanotechnology . 2011,第9期

机译：以CupraSelect为前驱体研究TiN衬底上热和热线化学气相沉积铜薄膜
4. Few-layer graphene direct deposition on Ni and Cu foil by cold-wall chemical vapor deposition [C] . 8th International Vacuum Electron Sources Conference and Nanocarbon . 2010

机译：通过冷壁化学气相沉积在Ni和Cu箔上直接沉积几层石墨烯
5. Low Temperature Direct Growth of Graphene Films on Transparent Substrates by Chemical Vapor Deposition. [D] . Antoine, Geoffrey Sandosh Jeffy. 2013

机译：通过化学气相沉积法在透明基板上低温直接生长石墨烯薄膜。
6. Growth of U-Shaped Graphene Domains on Copper Foil by Chemical Vapor Deposition [O] . Ming Pan, Chen Wang, Hua-Fei Li, 2019

机译：化学气相沉积法在铜箔上生长U形石墨烯结构域
7. Low substrate temperature deposition of amorphous and microcrystalline silicon films on plastic substrates by hot-wire chemical vapor deposition [O] . Alpuim P., Chu V., Conde J. P. 2000

机译：通过热线化学气相沉积在塑料衬底上低温度沉积非晶和微晶硅膜

Hot-Wire Chemical Vapor Deposition of Few-Layer Graphene on Copper Substrates

摘要

著录项

相似文献

相关主题

期刊订阅