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首页> 外文期刊>Japanese journal of applied physics >Towards the Integration of Carbon Nanotubes as Vias in Monolithic Three-Dimensional Integrated Circuits
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Towards the Integration of Carbon Nanotubes as Vias in Monolithic Three-Dimensional Integrated Circuits

机译：走向碳纳米管作为整体三维集成电路中通孔的集成

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摘要

Carbon nanotubes (CNT) can be an attractive candidate for vertical interconnects (vias) in three-dimensional integrated circuits due to their excellent thermal and electrical properties. To investigate the electrical resistivity of CNT, test vias were fabricated using both a top-down and bottom-up approach. The measured resistivity for the top-down process of 10mΩcm is among the better values found in literature. Beside this, the ability to grow CNT directly on single-grain thin-film transistors (SG-TFT) was demonstrated. The electrical performance of the SG-TFT was found not to be influenced by the CNT growth.
机译：碳纳米管（CNT）具有出色的热和电性能，因此可以成为三维集成电路中垂直互连（通孔）的有吸引力的候选材料。为了研究CNT的电阻率，使用自上而下和自下而上的方法制作了测试通孔。自上而下过程的10mΩcm测量电阻率是文献中发现的更好的值之一。除此之外，还展示了直接在单晶粒薄膜晶体管（SG-TFT）上生长CNT的能力。发现SG-TFT的电性能不受CNT生长的影响。

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  • 来源
    《Japanese journal of applied physics》 |2013年第4issue2期|04CB02.1-04CB02.5|共5页
  • 作者

    Sten Vollebregt; Ann N. Chiaramonti; Johan van der Cingel; Kees Beenakker; Ryoichi Ishihara;

  • 作者单位

    Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, 2628CT, Delft, The Netherlands;

    Materials Reliability Division, National Institute of Standards and Technology, Boulder, CO 80305, U.S.A.;

    Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, 2628CT, Delft, The Netherlands;

    Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, 2628CT, Delft, The Netherlands;

    Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics, 2628CT, Delft, The Netherlands;

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