Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication

Kohei Sakaike; Yoshitaka Kobayashi; Shogo Nakamura; Shohei Hayashi; Muneki Akazawa; Seiji Morisaki; Mitsuhisa Ikeda; Seiichiro Higashi

首页> 外文期刊>Japanese journal of applied physics >Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication

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Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication

机译：近红外半导体二极管激光辐照形成的半空中非晶硅膜的层转移和同时结晶技术及其在薄膜晶体管制造中的应用

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A novel layer transfer and simultaneous crystallization of amorphous silicon (a-Si) films induced by near-infrared semiconductor-diode-laser (SDL) irradiation has been investigated. The a-Si films supported by narrow quartz columns on a starting quartz substrate and a counter substrate [glass and poly(ethylene terephthalate)] were in face-to-face contact, and an SDL irradiated the a-Si films with midair structure. After SDL irradiation, the Si films were completely transferred and crystallized simultaneously on the counter substrates. In-situ monitoring revealed that the layer transfer took place either in the solid phase or the liquid phase followed by phase transformation in the cooling period. High performance polycrystalline Si thin-film transistors were successfully fabricated on the transferred Si films, which showed a high on/off ratio of more than 10~5 and a field-effect mobility as high as 268 cm~2 V~(-1) s~(-1).

机译：研究了由近红外半导体二极管激光（SDL）辐射诱导的非晶硅（a-Si）膜的新型层转移和同时结晶。使由窄石英柱支撑在起始石英基板和对向基板[玻璃和聚对苯二甲酸乙二酯]上的a-Si膜面对面接触，并用SDL照射具有半空中结构的a-Si膜。在SDL照射后，Si膜在对置基板上完全转移并同时结晶。原位监测表明，层转移发生在固相或液相中，随后在冷却阶段发生相变。在转移的硅膜上成功制备出高性能的多晶硅薄膜晶体管，其高开/关比超过10〜5，场效应迁移率高达268 cm〜2 V〜（-1） s〜（-1）。

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来源
《Japanese journal of applied physics》 |2013年第5issue3期|05EC01.1-05EC01.6|共6页
作者
Kohei Sakaike; Yoshitaka Kobayashi; Shogo Nakamura; Shohei Hayashi; Muneki Akazawa; Seiji Morisaki; Mitsuhisa Ikeda; Seiichiro Higashi;
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Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashihiroshima, Hiroshima 739-8530, Japan;

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1. A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser [J] . Kohei Sakaike, Yoshitaka Kobayashi, Shogo Nakamura, Japanese journal of applied physics . 2014,第4期

机译：近红外半导体二极管激光器辐照的半空中空洞非晶硅层局部转移同时结晶的技术
2. Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates [J] . Sakaike Kohei, Akazawa Muneki, Nakagawa Akitoshi, Japanese journal of applied physics . 2015,第4s期

机译：半月板力介导的半空中单晶硅膜层转移技术：在塑料基板上制造CMOS晶体管的应用
3. Metal-induced crystallization of amorphous zinc tin oxide semiconductors for high mobility thin-film transistors [J] . Ah Young Hwang, Sang Tae Kim, Hyuk Ji, Applied Physics Letters . 2016,第15期

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4. Layer Transfer and Simultaneous Crystallization of Amorphous Si Films with Mid-Air Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation [C] . K. Sakaike, Y. Kobayashi, S. Nakamura, Thin film transistors 11(TFT 11) . 2012

机译：近红外半导体二极管激光辐照形成的半空中非晶硅膜的层转移和同时结晶
5. Crystalline silicon thin films for thin-film transistor applications via excimer laser irradiation. [D] . Sposili, Robert Stephen. 2001

机译：通过准分子激光辐照用于薄膜晶体管的晶体硅薄膜。
6. Electronic Structure of Low-Temperature Solution-Processed AmorphousMetal Oxide Semiconductors for Thin-Film Transistor Applications [O] . Josephine Socratous, Kulbinder K Banger, Yana Vaynzof, -1

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7. Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates [O] . Kohei Sakaike, Muneki Akazawa, Akitoshi Nakagawa, 2015

机译：弯月球力介导的层传递技术，采用具有中型腔的单晶硅膜：在塑料基板上制造CMOS晶体管的应用

Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabrication

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