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首页> 外文期刊>Japanese journal of applied physics >p-Type Sb_2Te_3 and n-Type Bi_2Te_3 Films for Thermoelectric Modules Deposited by Thermally Assisted Sputtering Method
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p-Type Sb_2Te_3 and n-Type Bi_2Te_3 Films for Thermoelectric Modules Deposited by Thermally Assisted Sputtering Method

机译：热辅助溅射法沉积热电模块的p型Sb_2Te_3和n型Bi_2Te_3薄膜

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摘要

We developed a thermally assisted sputtering method (TASM) based on direct current magnetron sputtering to increase the rates of deposition of Sb_2Te_3 and Bi_2Te_3 films. The sputtering target was heated with the thermal energy of Ar plasma without any additional heating systems. The stoichiometric Sb_2Te_3 (p-type) and Bi_2Te_3 (n-type) films were obtained by TASM. The maximum deposition rate of the films was approximately 1.6 μm/min, which is large for a sputtering method. The differences in the composition ratio between the sputtering target and the deposited films were as small as 3.6 (p-type) and 1.5% (n-type). TASM was applied to the fabrication of a flexible thermoelectric film module. The generation properties of the film module coincided with the values that were estimated on the basis of the thermoelectric properties of films deposited on a SiO_2 glass substrate. These results indicate that TASM is useful for fabricating thermoelectric film modules.
机译：我们开发了一种基于直流磁控溅射的热辅助溅射方法（TASM），以提高Sb_2Te_3和Bi_2Te_3膜的沉积速率。溅射靶用Ar等离子体的热能加热，无需任何其他加热系统。通过TASM获得化学计量的Sb_2Te_3（p型）和Bi_2Te_3（n型）膜。膜的最大沉积速率约为1.6μm/ min，这对于溅射法而言很大。溅射靶和沉积膜之间的组成比的差异小至3.6（p型）和1.5％（n型）。 TASM被用于制造柔性热电薄膜模块。膜组件的产生特性与基于沉积在SiO_2玻璃基板上的膜的热电特性所估计的值一致。这些结果表明，TASM可用于制造热电薄膜组件。

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  • 来源
    《Japanese journal of applied physics》 |2013年第6issue2期|06GL07.1-06GL07.6|共6页
  • 作者

    Mizue Mizoshiri; Masashi Mikami; Kimihiro Ozaki;

  • 作者单位

    National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan;

    National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan;

    National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-8560, Japan;

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