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首页> 外文期刊>Japanese journal of applied physics >Metal-Oxide-Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO_2 on GaN
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Metal-Oxide-Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO_2 on GaN

机译:GaN上沉积的SiO_2原子层的金属-氧化物-半导体界面和介电特性

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摘要

The dielectric and MOS interface properties of SiO_2 deposited with atomic layer deposition (ALD) on GaN with different surface treatments have been investigated with DC current-voltage (Ⅰ-Ⅴ) measurements and UV-assisted capacitance-voltage (C-V) measurements. Dielectric breakdown characteristics and leakage conduction mechanism for ALD SiO_2 depend on surface conditions. Dry etch with NaOH post-etch GaN surface exhibited high oxide breakdown voltage with small distribution, larger barrier height characteristics, and higher charge to breakdown characteristics when compared with un-etched surface condition and dry etch with tetramethylammonium hydroxide (TMAH) post-etch surface condition. Moreover, fixed charge density and interface trap density at MOS interface extracted by UV-assisted C-V were comparable between un-etched surface sample and dry etch with NaOH post-etch surface sample, indicating dry etching damage recovery and demonstrating the usability of NaOH post-etching treatment. Comparison has also been made to a composite oxide of SiO_2/Al_2O_3/SiO_2, showing possibility of oxide charge engineering toward positive threshold voltage but carrier trapping by insertion of Al_2O_3.
机译:通过直流电流-电压(Ⅰ-Ⅴ)测量和紫外辅助电容-电压(C-V)测量,研究了原子层沉积(ALD)在GaN上进行了不同表面处理的SiO_2的介电和MOS界面特性。 ALD SiO_2的介电击穿特性和漏电传导机理取决于表面条件。与未蚀刻的表面条件相比,用NaOH后蚀刻的GaN表面进行的干蚀刻表现出较高的氧化物击穿电压,具有较小的分布,较大的势垒高度特性和较高的击穿电荷特性,以及使用四甲基氢氧化铵(TMAH)的后蚀刻表面进行的干蚀刻。健康)状况。此外,UV辅助CV提取的MOS界面上的固定电荷密度和界面陷阱密度在未蚀刻表面样品和使用NaOH后蚀刻表面样品的干法蚀刻之间具有可比性,表明干法蚀刻损伤的恢复并证明了NaOH后蚀刻的可用性。蚀刻处理。还对SiO_2 / Al_2O_3 / SiO_2的复合氧化物进行了比较,表明氧化物电荷朝正阈值电压工程化的可能性,但由于插入Al_2O_3而俘获载流子。

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  • 来源
    《Japanese journal of applied physics》 |2013年第8issue2期|08JN24.1-08JN24.4|共4页
  • 作者单位

    Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.,Fuji Electric Co., Ltd., Hino, Tokyo 191-8502, Japan;

    Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.;

    Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A.;

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