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首页> 外文期刊>Japanese journal of applied physics >Correlations between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures
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Correlations between Epitaxy Recipe, Characteristics, and Performance of Nitride Light Emitting Diode Structures

机译:外延配方,氮化物发光二极管结构的特性与性能之间的相关性

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摘要

Metal-organic vapor phase epitaxy of Ⅲ-nitride light-emitting diode (LED) structures is analyzed by coupled process-device modeling. Different recipes to grow active regions of the structures are examined. The major attention is given to the impact of process recipe on indium composition profile in the active region. Correlations between the composition profiles and device characteristics are discussed. We have focused on the analysis of LED structures with short-period superlattice active regions providing improved efficiency, reduced efficiency droop, and high emission wavelength stability with current. Performances of the structures grown with various recipes are compared to find the most promising growth procedure and evaluate its impact on the operation of the LED heterostructure.
机译:通过耦合过程器件模型分析了Ⅲ族氮化物发光二极管(LED)结构的金属有机气相外延。研究了用于生长结构的有效区域的不同配方。主要关注的是工艺配方对有源区中铟成分分布的影响。讨论了成分分布与器件特性之间的相关性。我们专注于分析具有短周期超晶格有源区的LED结构,该结构可提供更高的效率,更低的效率下垂以及电流产生的高发射波长稳定性。比较使用各种配方生长的结构的性能,以找到最有前途的生长过程,并评估其对LED异质结构操作的影响。

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