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首页> 外文期刊>Japanese journal of applied physics >Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
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Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors

机译：基于AlGaN / GaN的杂场效应晶体管光电传感器中检测波长的控制

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摘要

We examined the control of the detection wavelength in AlGaN/GaN-based hetero-field-effect-transistor (HFET) photosensors. The detection wavelength of these devices can be controlled by using the p-GaInN optical gate or inserting a GaInN channel layer between AlGaN and GaN. In addition, the photosensitivity of AlGaN/GaN HFET photosensors with a p-GaInN optical gate was more than two orders of magnitude higher than that of the AlGaN/GaN HFET photosensor with a GaInN channel layer. Moreover, the photosensitivity of the AlGaN/GaN HFET photosensor with a p-GaInN optical gate greatly surpassed those of commercially available Si pin and Si avalanche photodiodes, and was comparable to those of photomultiplier tubes.
机译：我们研究了基于AlGaN / GaN的异质场效应晶体管（HFET）光电传感器中检测波长的控制。这些设备的检测波长可以通过使用p-GaInN光闸或在AlGaN和GaN之间插入GaInN沟道层来控制。另外，具有p-GaInN光栅极的AlGaN / GaN HFET光电传感器的光敏度比具有GaInN沟道层的AlGaN / GaN HFET光电传感器的光敏度高两个数量级以上。此外，带有p-GaInN光闸的AlGaN / GaN HFET光电传感器的光敏度大大超过了市售的Si pin和Si雪崩光电二极管，并且与光电倍增管相当。

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  • 来源
    《Japanese journal of applied physics》 |2013年第8issue2期|08JF02.1-08JF02.4|共4页
  • 作者

    Mami Ishiguro; Kazuya Ikeda; Masataka Mizuno; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki;

  • 作者单位

    Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

    Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

    Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

    Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

    Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

    Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan;

    Faculty of Science and Technology, Meijo University, Nagoya 468-8502, Japan,Akasaki Research Center, Nagoya University, Nagoya 464-8603, Japan;

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