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首页> 外文期刊>Japanese journal of applied physics >New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al_2O_3/Ga_2O_3 Stacks
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New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al_2O_3/Ga_2O_3 Stacks

机译：利用多个Al_2O_3 / Ga_2O_3堆叠中的电荷积累的新型AlGaN / GaN高电子迁移率晶体管

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摘要

We have proposed and fabricated new AlGaN/GaN high electron mobility transistors (HEMTs) employing charge accumulation in multiple Al_2O_3/ Ga_2O_3 stacks by rf-sputtering in order to increase the breakdown voltage and the threshold voltage (V_(TH)). 10-nm-thick rf-sputtered Al_2O_3/Ga_2O_3 stacks on the GaN cap, which consist of 2-nm-thick Al_2O_3 and 2-nm-thick Ga_2O_3, would induce accumulation of electrons and holes in the stacks on AlGaN/GaN HEMTs. The proposed device achieves the high breakdown voltage of 1104V while the unpassivated one shows the low breakdown voltage of 380 V. The drain leakage current is considerably suppressed from 654μA/mm to 33nA/mm. The V_(TH) of the proposed device is -1.4 V while that of the conventional device is -2 V due to the accumulated electrons in the multiple Al_2O_3/Ga_2O_3 stacks. We have also investigated the charge accumulation phenomena by applying the negative DC stress to the proposed device with and without final SiC>2 passivation, respectively.
机译：我们已经提出并制造了新的AlGaN / GaN高电子迁移率晶体管（HEMT），该晶体管通过rf溅射在多个Al_2O_3 / Ga_2O_3叠层中积累电荷，以增加击穿电压和阈值电压（V_（TH））。由2nm厚的Al_2O_3和2nm厚的Ga_2O_3组成的GaN帽盖上的10nm厚的rf溅射Al_2O_3 / Ga_2O_3堆叠将在AlGaN / GaN HEMT上的堆叠中引起电子和空穴的积累。所提出的器件实现了1104V的高击穿电压，而未钝化的器件则显示了380V的低击穿电压。漏极泄漏电流从654μA/ mm抑制到33nA / mm。由于在多个Al_2O_3 / Ga_2O_3堆叠中累积的电子，因此所提出的器件的V_（TH）为-1.4 V，而常规器件的V_（TH）为-2V。我们还通过将负DC应力分别施加到所建议的带有和不带有最终SiC> 2钝化的器件上来研究电荷累积现象。

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  • 来源
    《Japanese journal of applied physics》 |2012年第10issue1期|101001.1-101001.4|共4页
  • 作者

    Ogyun Seok; Woojin Ahn; Min-Koo Han; Min-Woo Ha;

  • 作者单位

    Department of Electrical Engineering, Seoul National University, Seoul 151-744, Korea;

    Department of Electrical Engineering, Seoul National University, Seoul 151-744, Korea;

    Department of Electrical Engineering, Seoul National University, Seoul 151-744, Korea;

    Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, Korea;

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