...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Vibration Analysis and Transmission Characteristics of Piezoelectric Micromachined Ultrasonic Transducers Using Epitaxial Pb(Zr,Ti)O_3 Thin Films on γ-Al_2O_3/Si Substrate
【24h】

Vibration Analysis and Transmission Characteristics of Piezoelectric Micromachined Ultrasonic Transducers Using Epitaxial Pb(Zr,Ti)O_3 Thin Films on γ-Al_2O_3/Si Substrate

机译：γ-Al_2O_3/ Si衬底上外延Pb（Zr，Ti）O_3薄膜压电微机械超声换能器的振动分析和传输特性

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Low-voltage (<12 V)-operation piezoelectric micromachined ultrasonic transducers (pMUTs) are hoped to be integrated with Si-LSI. Realizing this requires not only improving the piezoelectric properties, but also clarifying the vibration modes of transducers. In this study, we experimentally investigated the vibration mode and transmission ultrasonic waves by pMUTs using epitaxial Pb(Zr,Ti)C>3 thin films on the epitaxial γ-Al_2O_3/Si substrates to radiate ultrasonic waves effectively. Five resonance vibration modes appeared in 100-μm-diameter circular pMUTs at frequencies in the range from 1 to 10 MHz in air. The frequency of mode (0,1) was 2.2 MHz, and this mode radiates ultrasonic waves very effectively. Ultrasonic transmission was also achieved in water using the above vibration mode, applying voltage of less than 10 Vp-p. These results show the potential for high-frequency pMUT integration with Si devices.
机译：希望将低压（<12 V）操作压电微机械超声换能器（pMUT）与Si-LSI集成在一起。实现这一点不仅需要改善压电特性，而且还需要弄清换能器的振动模式。在本研究中，我们通过实验研究了外延γ-Al_2O_3/ Si衬底上外延Pb（Zr，Ti）C> 3薄膜的pMUT的振动模式和传输超声波，以有效地辐射超声波。在直径为100μm的圆形pMUT中，在空气中的1至10 MHz范围内出现了五个共振振动模式。模式（0,1）的频率为2.2 MHz，此模式非常有效地辐射超声波。使用上述振动模式，在水中施加小于10 Vp-p的电压也可以实现超声波传输。这些结果表明了与硅器件进行高频pMUT集成的潜力。

著录项

  • 来源
    《Japanese journal of applied physics》 |2012年第11issue2期|11PA04.1-11PA04.4|共4页
  • 作者

    Daisuke Akai; Katsuya Ozaki; Yasuyuki Numata; Keisuke Suzuki; Nagaya Okada; Makoto Ishida;

  • 作者单位

    Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;

    Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;

    Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;

    Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;

    Honda Electronics Co., Ltd., Toyohashi, Aichi 441-3193, Japan;

    Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan,Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号