A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal-Oxide-Semiconductor Field-Effect Transistor

Hyoungjun Na; Tetsuo Endoh

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A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal-Oxide-Semiconductor Field-Effect Transistor

机译：具有堆叠式垂直金属氧化物半导体场效应晶体管的紧凑型半选择无扰动静态随机存取存储单元

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In this paper, a half select disturb free compact static random access memory (SRAM) cell with the stacked vertical metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed, and the impacts on its cell size, stability and speed performance are evaluated. The proposed SRAM cell has a small cell size, which is 67% of the conventional eight-transistor (8T) SRAM cell, because of its stacked vertical MOSFET structure. It realizes a half select disturb free SRAM operation; therefore, a larger static noise margin of 5.9 times is achieved in comparison with the conventional 8T SRAM cell. It suppresses the degradation of the write margin, thus its write margin is 84.2% of the conventional 8T SRAM cell. Furthermore, it suppresses the degradation of the write time by 39% (0.249 ns). The proposed compact SRAM cell with the stacked vertical MOSFET is a suitable SRAM cell with a small cell size, immunity to the half select disturb, wide write margin and fast write time.

机译：本文提出了一种具有垂直金属氧化物半导体场效应晶体管（MOSFET）的半选择无干扰紧凑型静态随机存取存储器（SRAM）单元，该单元对单元尺寸，稳定性和速度性能有影响。评估。所提出的SRAM单元具有较小的单元尺寸，这是传统的八晶体管（8T）SRAM单元的67％，这是因为其具有堆叠式垂直MOSFET结构。它实现了半选择无干扰SRAM操作；因此，与传统的8T SRAM单元相比，可实现5.9倍的更大静态噪声容限。它抑制了写入容限的下降，因此其写入容限是传统8T SRAM单元的84.2％。此外，它将写入时间的下降抑制了39％（0.249 ns）。所提出的带有堆叠式垂直MOSFET的紧凑型SRAM单元是一种合适的SRAM单元，具有较小的单元尺寸，对半选择干扰的抗扰性，较宽的写入裕度和快速的写入时间。

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《Japanese journal of applied physics》 |2012年第2issue2期|p.02BD03.1-02BD03.8|共8页
作者
Hyoungjun Na; Tetsuo Endoh;
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Center for Interdisciplinary Research, Tohoku University, JST-CREST, Sendai 980-8578, Japan;

Center for Interdisciplinary Research, Tohoku University, JST-CREST, Sendai 980-8578, Japan;

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A Compact Half Select Disturb Free Static Random Access Memory Cell with Stacked Vertical Metal-Oxide-Semiconductor Field-Effect Transistor

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