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首页> 外文期刊>Japanese journal of applied physics >A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure
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A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure

机译:多功能静电定义的硅量子点结构

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摘要

Small size and good coupling control between dots are the key parameters for useful coupled quantum dot devices. Using a new approach of electrostatically defined silicon double quantum dot device recently proposed, we design and simulate a silicon quantum dot structure that exhibits multi functionality. Control on potential tunnel barrier using side gates, as well as the preparation of series-coupled and parallel-coupled double quantum dot structure are demonstrated and explained by numerical simulation on electron distribution profile.
机译:点的小尺寸和良好的耦合控制是有用的耦合量子点器件的关键参数。使用最近提出的静电定义的硅双量子点器件的新方法,我们设计并模拟了具有多功能性的硅量子点结构。通过电子分布轮廓的数值模拟,说明和解释了利用侧栅控制潜在的隧道势垒,以及制备串联和并联的双量子点结构的方法。

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  • 来源
    《Japanese journal of applied physics》 |2012年第2issue2期|p.02BJ010.1-02BJ010.4|共4页
  • 作者单位

    Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan Institute for Nano Quantum Information Electronics, The University of Tokyo, Meguro, Tokyo 153-8505, Japan PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

    Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan;

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