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首页> 外文期刊>Japanese journal of applied physics >Electrical Property of DNA Field-Effect Transistor: Charge Retention Property
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Electrical Property of DNA Field-Effect Transistor: Charge Retention Property

机译：DNA场效应晶体管的电性能：电荷保持性能

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摘要

We discovered the charge retention property of the field-effect transistor (FET) in a Si gate/SiO_2/DNA channel structure. The DNA FET with the Si source and drain showed hole conduction, and the drain current was controlled by the gate voltage application. In addition, the experimental results that currents similar to the space change limited currents (SCLCs) and hysteresis were observed in the drain current-drain voltage (I_d-V_d) characteristics indicate that the negative charges captured at the trap sites in the DNA enhance the hole currents. Also, the drain currents increased as the repetition number of the measurement increased. However, by inserting the refresh process of gate voltage application of -50 V between each measurement, the current increase was restrained. This phenomenon indicates that the trap and detrap process of electrons occurs in the DNA channel depending on the gate voltage application. The charge retention mechanism was also discussed.
机译：我们发现场效应晶体管（FET）在Si栅/ SiO_2 / DNA通道结构中的电荷保持特性。具有Si源极和漏极的DNA FET显示出空穴传导，并且通过施加栅极电压来控制漏极电流。此外，实验结果表明，在漏极电流-漏极电压（I_d-V_d）特性中观察到了与空间变化限制电流（SCLC）和磁滞相似的电流，这表明在DNA的捕获位点捕获的负电荷增强了DNA的捕获能力。空穴电流。而且，漏极电流随着测量的重复次数增加而增加。但是，通过在每次测量之间插入-50 V的栅极电压施加刷新过程，可以抑制电流的增加。这种现象表明，取决于栅极电压的施加，电子的捕获和释放过程会在DNA通道中发生。还讨论了电荷保持机制。

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  • 来源
    《Japanese journal of applied physics》 |2012年第4issue2期|p.04DD13.1-04DD13.4|共4页
  • 作者

    Naoto Matsuo; Shyogo Takagi; Kazushige Yamana; Akira Heya; Tadao Takada; Shin Yokoyama;

  • 作者单位

    Department of Materials Science and Chemistry, University of Hyogo, Himeji, Hyogo 671-2280, Japan;

    Department of Materials Science and Chemistry, University of Hyogo, Himeji, Hyogo 671-2280, Japan;

    Department of Materials Science and Chemistry, University of Hyogo, Himeji, Hyogo 671-2280, Japan;

    Department of Materials Science and Chemistry, University of Hyogo, Himeji, Hyogo 671-2280, Japan;

    Department of Materials Science and Chemistry, University of Hyogo, Himeji, Hyogo 671-2280, Japan;

    Research Institute for Nanodevice and Bio Systems, Hiroshima University, Higashihiroshima, Hiroshima 739-8527, Japan;

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