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首页> 外文期刊>Japanese journal of applied physics >Analysis of the Performance of an Inverter Circuit: Varying the Thickness of the Active Layer in Polymer Thin Film Transistors with Circuit Simulation
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Analysis of the Performance of an Inverter Circuit: Varying the Thickness of the Active Layer in Polymer Thin Film Transistors with Circuit Simulation

机译：逆变器电路性能分析：通过电路仿真改变聚合物薄膜晶体管中有源层的厚度

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摘要

In this paper, we study, through simulation, the effects on the behavior of an inverter circuit when the active layer thickness of the polymer thin film transistor design is modified. A previously developed compact model for polymer transistors was implemented in standardized hardware description language. We validate results with measured characteristics of transistors fabricated with a poly(methyl methacrylate) layer on top of a poly(3-hexylthiophene-2,5-diyl). This analysis indicates that decreasing the thickness of the active layer can increase the output voltage swing and hence the noise margin in digital circuits. Higher noise margin and larger gain were found for inverters with active layer thicknesses less than 40 nm.
机译：在本文中，我们通过仿真研究了修改聚合物薄膜晶体管设计的有源层厚度时，逆变器电路的行为。以前开发的用于聚合物晶体管的紧凑模型是用标准化的硬件描述语言实现的。我们用在聚（3-己基噻吩-2,5-二基）上的聚（甲基丙烯酸甲酯）层制造的晶体管的测量特性来验证结果。该分析表明，减小有源层的厚度会增加输出电压摆幅，从而增加数字电路的噪声容限。发现有源层厚度小于40 nm的逆变器具有更高的噪声容限和更大的增益。

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  • 来源
    《Japanese journal of applied physics》 |2012年第4issue2期|p.04DK04.1-04DK04.6|共6页
  • 作者

    Luis Resendiz; Magali Estrada; Antonio Cerdeira; Vfctor Cabrera;

  • 作者单位

    Section of Postgraduate Studies and Research Unidad Profesional Interdisciplinaria en Ingenieria y Tecnologfas Avanzadas, Instituto Politecnico Nacional, 07340 D. F., Mexico;

    Department of Electrical Engineering, Section of Solid-State Electronics, Centro de Investigacion y de Estudios Avanzados, Instituto Politecnico Nacional, 07360 D. F., Mexico;

    Department of Electrical Engineering, Section of Solid-State Electronics, Centro de Investigacion y de Estudios Avanzados, Instituto Politecnico Nacional, 07360 D. F., Mexico;

    Section of Postgraduate Studies and Research Unidad Profesional Interdisciplinaria en Ingenieria y Tecnologfas Avanzadas, Instituto Politecnico Nacional, 07340 D. F., Mexico;

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