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首页> 外文期刊>Japanese journal of applied physics >Microfabrication of Si-Based High-Index-Contrast-Grating Structure by Thermal Nanoimprint Lithography and CI_2/Xe-lnductively Coupled Plasma Etching
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Microfabrication of Si-Based High-Index-Contrast-Grating Structure by Thermal Nanoimprint Lithography and CI_2/Xe-lnductively Coupled Plasma Etching

机译:热纳米压印光刻技术和CI_2 / Xe电感耦合等离子体刻蚀对硅基高折射率光栅结构进行微细加工

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摘要

We demonstrated the fabrication of a Si-based high-index-contrast-grating (HCG) structure by thermal nanoimprint lithography and CI2/Xe-inductively coupled plasma (ICP) etching. A vertical etching profile and a smooth etched surface, which satisfy the requirements for optical device application, were obtained. We believe that this proposed process is useful for the microfabrication of Si-based optical devices, such as the HCG structure, photonic crystals, narrow optical waveguides, and micro-electro-mechanical systems (MEMS).
机译:我们演示了通过热纳米压印光刻技术和CI2 / Xe电感耦合等离子体(ICP)蚀刻制造的基于Si的高折射率对比光栅(HCG)结构。获得了满足光学器件应用要求的垂直蚀刻轮廓和光滑的蚀刻表面。我们认为,该提议的过程对于基于HCG结构,光子晶体,窄光波导和微机电系统(MEMS)的基于Si的光学器件的微制造很有用。

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  • 来源
    《Japanese journal of applied physics》 |2012年第6issue2期|p.06FF05.1-06FF05.4|共4页
  • 作者单位

    Semiconductor and MEMS Processing Center, Technical Department Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Samco Inc., Kyoto 612-8443, Japan;

    Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

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