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首页> 外文期刊>Japanese journal of applied physics >Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by AI_2O_3 Passivation Layer
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Diamond Field-Effect Transistors with 1.3 A/mm Drain Current Density by AI_2O_3 Passivation Layer

机译：AI_2O_3钝化层具有1.3 A / mm漏极电流密度的金刚石场效应晶体管

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摘要

Using nitrogen-dioxide (NO_2) adsorption treatment and Al_2O_3 passivation technique, we improved drain current (I_(DS)) of hydrogen-terminated (H-terminated) diamond field-effect transistors (FETs). The Al_2O_3 passivation layer also serves as a gate-insulator in a gate region. Maximum I_(DS) (I_(DSmax)) of -1.35 A/mm was obtained for the diamond FETs with NO_2 adsorption and the Al_2O_3 passivation layer. This I_(DSmax) is the highest ever reported for diamond FETs and indicates that the Al_2O_3 passivation layer can stabilize adsorbed NO_2, which increases the hole carrier concentration on the H-terminated diamond surface. In RF small-signal characteristics, the diamond FETs with NO_2 adsorption and the Al_2O_3 passivation layer showed high cutoff-frequency (f_T) and maximum frequency of oscillation (f_(max)) in a wide gate-source voltage (V_(GS)) range (> 10 V). This is because the Al_2O_3 gate insulator with a high potential barrier against hole carriers can confine and control the high concentration of hole carriers and then high forward-bias voltage can be applied without noticeable gate leakage current.
机译：使用二氧化氮（NO_2）吸附处理和Al_2O_3钝化技术，我们改善了氢终止（H终止）金刚石场效应晶体管（FET）的漏极电流（I_（DS））。 Al_2O_3钝化层还用作栅极区域中的栅极绝缘体。对于具有NO_2吸附和Al_2O_3钝化层的金刚石FET，获得的最大I_（DS）（I_（DSmax））为-1.35 A / mm。 I_（DSmax）是金刚石FET所报道的最高值，表明Al_2O_3钝化层可以稳定吸附的NO_2，从而增加了H端金刚石表面的空穴载流子浓度。在射频小信号特性中，具有NO_2吸附和Al_2O_3钝化层的金刚石FET在宽的栅极-源极电压（V_（GS））中显示出高截止频率（f_T）和最大振荡频率（f_（max））。范围（> 10 V）。这是因为对空穴载流子具有高势垒的Al_2O_3栅极绝缘体可以限制和控制空穴载流子的高浓度，然后可以施加高的正向偏置电压而不会产生明显的栅极泄漏电流。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue1期|p.090112.1-090112.5|共5页
  • 作者

    Kazuyuki Hirama; Hisashi Sato; Yuichi Harada; Hideki Yamamoto; Makoto Kasu;

  • 作者单位

    NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

    NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

    NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

    NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

    NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan,Saga University, Department of Electrical and Electronic Engineering, Saga 840-8502, Japan;

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