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首页> 外文期刊>Japanese journal of applied physics >Compensation of Native Defect Acceptors in Microcrystalline Ge and Si_(1-x)Ge_x Thin Films by Oxygen Incorporation: Electrical Properties and Solar Cell Performance
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Compensation of Native Defect Acceptors in Microcrystalline Ge and Si_(1-x)Ge_x Thin Films by Oxygen Incorporation: Electrical Properties and Solar Cell Performance

机译：掺氧补偿微晶Ge和Si_（1-x）Ge_x薄膜中的天然缺陷受体：电性能和太阳能电池性能

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摘要

Undoped hydrogenated microcrystalline Ge (μc-Ge:H) films grown by plasma-enhanced chemical vapor deposition reveal high concentration of free holes (>10~(18) cm~(-3)) when the films exhibit a high crystalline volume fraction. ESR and Hall-effect experiments suggest that the acceptor states arise from the native dangling bond defects at Ge crystalline grain boundaries. It is demonstrated that an intentional oxygen incorporation during the μc-Ge:H deposition reduces the hole concentration by two orders of magnitude. Furthermore, μc-Si_(1-x)Ge_x:H (x = 0.1-0.3) alloy p-i-n solar cells show marked improvements in photocarrier collection properties upon oxygen incorporation into the i-layer in the order of 5 × 10~(18)-10~(20)cm~(-3). These findings are explained by the effect of the compensation of the negatively charged Ge dangling bonds by oxygen donors.
机译：当等离子体显示出高的晶体体积分数时，通过等离子体增强化学气相沉积法生长的未掺杂的氢化微晶Ge（μc-Ge：H）膜显示出高浓度的自由空穴（> 10〜（18）cm〜（-3））。 ESR和霍尔效应实验表明，受主态是由Ge晶界处的天然悬空键缺陷引起的。结果表明，在μc-Ge：H沉积过程中故意掺入氧气会使空穴浓度降低两个数量级。此外，μc-Si_（1-x）Ge_x：H（x = 0.1-0.3）合金pin太阳能电池在氧掺入i层的顺序为5×10〜（18）时显示出显着的光载流子收集特性改善。 -10〜（20）cm〜（-3）。这些发现是由供氧体对带负电的Ge悬挂键的补偿作用所解释的。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue1期|p.091302.1-091302.6|共6页
  • 作者

    Takuya Matsui; Chia-Wen Chang; Kouichi Mizuno; Yoshiaki Takeuchi; Michio Kondo;

  • 作者单位

    Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan;

    Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan,Industrial Technology Research Institute (ITRI), Hsinchu 31040, Taiwan;

    Nagasaki R&D Center, Mitsubishi Heavy Industries, Ltd. (MHI), Nagasaki 851-0301, Japan;

    Solar Power System Business Unit, MHI, Isahaya, Nagasaki 854-0065, Japan;

    Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan;

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