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首页> 外文期刊>Japanese journal of applied physics >Film Thickness Dependence of Ferroelectric Properties of (111)-Oriented Epitaxial Bi(Mg_(1/2)Ti_(1/2))O_3 Films
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Film Thickness Dependence of Ferroelectric Properties of (111)-Oriented Epitaxial Bi(Mg_(1/2)Ti_(1/2))O_3 Films

机译：（111）取向外延Bi（Mg_（1/2）Ti_（1/2））O_3薄膜铁电性能的薄膜厚度依赖性

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摘要

The origin of the ferroelectricity of Bi(Mg_(1/2)Ti_(1/2))O_3 films was investigated. Epitaxial Bi(Mg_(1/2)Ti_(1/2))O_3 films with film thicknesses of 50 to 800 nm were grown on (111)_cSrRuO_3/(111)SrTiO_3 substrates by pulsed laser deposition. A Bi(Mg_(1/2)Ti_(1/2))O_3 film was not strongly clamped from the substrate and identified to have rhombohedral symmetry with a = 0.398 nm and α = 89.8°, which was independent of film thickness within 100 to 800nm. The relative dielectric constant, remanent polarization, and coercive field of the Bi(Mg_(1/2)Ti_(1/2))O_3 films at room temperature were almost constant at about 250, 60μC/cm~2, and 240kV/cm, respectively, for film thicknesses above 200nm. These data suggest that Bi(Mg_(1/2)Ti_(1/2))O_3 films are ferroelectric.
机译：研究了Bi（Mg_（1/2）Ti_（1/2））O_3薄膜铁电性的起源。通过脉冲激光沉积在（111）_cSrRuO_3 /（111）SrTiO_3衬底上生长膜厚度为50至800nm的外延Bi（Mg_（1/2）Ti_（1/2））O_3膜。 Bi（Mg_（1/2）Ti_（1/2））O_3薄膜未从衬底上牢固夹持，并被确定具有a = 0.398 nm和α= 89.8°的菱面体对称性，与膜厚度在100以内无关到800nm Bi（Mg_（1/2）Ti_（1/2））O_3薄膜在室温下的相对介电常数，剩余极化和矫顽场几乎恒定在250、60μC / cm〜2和240kV / cm左右分别用于200nm以上的膜厚度。这些数据表明Bi（Mg_（1/2）Ti_（1/2））O_3薄膜是铁电的。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue2期|p.09LA04.1-09LA04.4|共4页
  • 作者

    Takahiro Oikawa; Shintaro Yasui; Takayuki Watanabe; Hisato Yabuta; Yoshitaka Ehara; Tetsuro Fukui; Hiroshi Funakubo;

  • 作者单位

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan;

    Corporate R&D Headquarters, Canon Inc., Ota, Tokyo 146-8501, Japan;

    Corporate R&D Headquarters, Canon Inc., Ota, Tokyo 146-8501, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan;

    Corporate R&D Headquarters, Canon Inc., Ota, Tokyo 146-8501, Japan;

    Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8502, Japan;

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