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首页> 外文期刊>Japanese journal of applied physics >Interfacial Dead Layers on Lead Free Ferroelectric (K_(0.5)Na_(0.5))(Mn_(0.005)Nb_(0.995))O_3 Thin Films
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Interfacial Dead Layers on Lead Free Ferroelectric (K_(0.5)Na_(0.5))(Mn_(0.005)Nb_(0.995))O_3 Thin Films

机译：无铅铁电（K_（0.5）Na_（0.5））（Mn_（0.005）Nb_（0.995））O_3薄膜上的界面死层

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摘要

(K_(0.5)Na_(0.5))(Mn_(0.005)Nb_(0.995))O_3 (KNMN) thin films of thickness ranging from 200 to 500 nm were deposited on Pt/TiO_X/SiO_2/Si substrates using a chemical solution deposition. The films exhibit well-established ferroelectric hysteresis loops with a remanent polarization (P_r) of 13-16μC/cm~2. Their coercive voltages exhibit an increase with increasing film thickness, which is accounted for by the existence of an interfacial dead layer. Their dielectric constant demonstrates frequency and thickness dependent behavior, supporting the existence of the interfacial dead layer. We confirmed that interfacial dead layers with thickness di and dielectric constant εi existed in KNMN films using the "in-series capacitor" model. The ratios of dielectric constant and thickness of interfacial dead layers (εi/di) of KNMN thin films were obtained by calculations of 3.84 nm~(-1) and measurements of 3.75 nm~(-1), which are in good agreement with the "in-series capacitor" model and experimental results.
机译：（K_（0.5）Na_（0.5））（Mn_（0.005）Nb_（0.995））O_3（KNMN）使用化学溶液沉积法将厚度范围为200至500 nm的薄膜沉积在Pt / TiO_X / SiO_2 / Si衬底上。薄膜具有完善的铁电磁滞回线，剩余极化强度（P_r）为13-16μC/ cm〜2。它们的矫顽电压随膜厚度的增加而增加，这是由于存在界面死层而造成的。它们的介电常数显示出频率和厚度相关的行为，支持了界面死层的存在。我们使用“串联电容器”模型确认了KNMN膜中存在厚度为di和介电常数为εi的界面死层。通过计算3.84 nm〜（-1）和测量3.75 nm〜（-1）得到KNMN薄膜的介电常数和界面死层厚度的比值（εi/ di）。 “串联电容器”的模型和实验结果。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue3期|09MD03.1-09MD03.4|共4页
  • 作者

    Sun Young Lee; Hae Jin Seog; Chang Won Ahn; Aman Ullah; III Won Kim;

  • 作者单位

    Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea;

    Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea;

    Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea;

    Department of Physics, University of Science and Technology, Bannu, Khyber Pakhtunkhwa, Pakistan;

    Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea;

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