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首页> 外文期刊>Japanese journal of applied physics >Fabrication of Organic Thin-Film Transistors Based on Cross-Linked Hybrid Dielectric Materials
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Fabrication of Organic Thin-Film Transistors Based on Cross-Linked Hybrid Dielectric Materials

机译：基于交联混合介电材料的有机薄膜晶体管的制备

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摘要

We report here the synthesis and dielectric properties of cross-linked hybrid dielectrics for organic field-effect transistor application. Hybrid thin films were first fabricated by hydrolysis of methacrylate-modified titanium and zirconium alkoxides and were further cross-linked via polymerization under UV. The dielectrics exhibit high dielectric constants (5.2-9) and good insulating properties with low leakage current densities (10~(-6)-10~(-7) A/cm~2) even though the dielectric film thickness was about 25-150 nm. Furthermore, the hybrid thin films had smooth and hydrophobic surfaces. The fabricated pentacene field-effect transistors using these dielectrics show good electric performance, including a carrier mobility as large as 0.29 cm~2 V~(-1) s~(-1), a subthreshold swing as low as 0.13 V/decade, an on/off current ratio of ～10~5, and a low threshold voltage of 0.3 V with TiO_2 hybrid dielectrics. Organic thin-film transistors (OTFTs) fabricated with ZrO_2 hybrid insulators exhibit a carrier mobility of 0.21 cm~(-2) V~(-1) s~(-1) with an I_(on)/I_(off) ratio of ～10~4, a threshold voltage of -0.83 V, and a subthreshold swing of 0.39 V/decade.
机译：我们在这里报告了有机场效应晶体管应用的交联混合电介质的合成和介电性能。杂化薄膜首先通过甲基丙烯酸酯改性的钛和锆的醇盐的水解制备，然后通过紫外线聚合进一步交联。即使电介质膜的厚度约为25-（-），电介质仍具有高介电常数（5.2-9）和良好的绝缘性能，漏电流密度低（10〜（-6）-10〜（-7）A / cm〜2）。 150纳米此外，杂化薄膜具有光滑和疏水的表面。使用这些电介质制造的并五苯场效应晶体管具有良好的电性能，包括载流子迁移率高达0.29 cm〜2 V〜（-1）s〜（-1），亚阈值摆幅低至0.13 V /十倍， TiO_2杂化电介质的开/关电流比约为10〜5，阈值电压低至0.3V。使用ZrO_2杂化绝缘体制造的有机薄膜晶体管（OTFT）的载流子迁移率为0.21 cm〜（-2）V〜（-1）s〜（-1），I_（on）/ I_（off）的比为〜10〜4，阈值电压为-0.83 V，亚阈值摆幅为0.39 V /十倍。

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  • 来源
    《Japanese journal of applied physics》 |2012年第9issue3期|09MJ02.1-09MJ02.5|共5页
  • 作者

    Yuedan Wang; Yeonok Kim; Eunju Lee; Hongdoo Kim;

  • 作者单位

    Department of Chemistry, Kyung Hee University, Yongin, Gyeonggi 446-701, Korea;

    Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Korea;

    Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Korea;

    Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi 446-701, Korea;

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