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首页> 外文期刊>Japanese journal of applied physics.Part 1.Regular papers & short notes >Selective Synthesis of SiC and SiO-x Nanowires by Direct Microwave Irradiation
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Selective Synthesis of SiC and SiO-x Nanowires by Direct Microwave Irradiation

机译:直接微波辐射选择性合成SiC和SiO-x纳米线

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摘要

We report a facile and novel method for the selective growth of SiC and SiO-x nanowires by direct microwave irradiation on a Si substrate under atmospheric pressure. Selective synthesis of the amorphous SiO-x or crystalline SiC nanowires was achieved by varying the gas composition in the reactor. The proposed method requires a short reaction time (2 min) with no need for vacuum equipment because the reaction is carried out under atmospheric pressure. High-resolution transmission electron microscope images revealed that the SiO-x nanowires were amorphous and that the SiC nanowires were crystalline. Raman spectra showed features typical of nano-sized SiC. On the basis of our results, we propose a growth mechanism of SiC and SiO-x nanowires synthesized by direct microwave irradiation.
机译:我们报告了一种简便而新颖的方法,用于通过在大气压力下在Si基板上进行直接微波辐射来选择性生长SiC和SiO-x纳米线。通过改变反应器中的气体组成,实现了非晶SiO-x或结晶SiC纳米线的选择性合成。所提出的方法需要短的反应时间(2分钟),不需要真空设备,因为反应是在大气压下进行的。高分辨率透射电子显微镜图像显示SiO-x纳米线为非晶态,而SiC纳米线为晶态。拉曼光谱显示出纳米SiC的典型特征。根据我们的结果,我们提出了通过直接微波辐射合成的SiC和SiO-x纳米线的生长机理。

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    Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea;

    Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea;

    Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea;

    Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea;

    Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea;

    Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea;

    Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea;

    Central Advanced Research and Engineering Institute, Hyundai Motor Company, Uiwang 437-718, Korea;

    Central Advanced Research and Engineering Institute, Hyundai Motor Company, Uiwang 437-718, Korea;

    Central Advanced Research and Engineering Institute, Hyundai Motor Company, Uiwang 437-718, Korea;

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