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Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers

机译：RuN阻挡层与Cu种子层之间的电流效应研究

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摘要

In this study, we investigated the galvanic effect between the Cu metals and ruthenium nitride (RuN_x) films that were deposited at various nitrogen (N_2) gas flow rates in chemical mechanical polishing slurries. It was found that the galvanic corrosion of the RuN_x films was inhibited with increasing N_2 gas flow ratio, whereas the galvanic corrosion of the Cu seed layers was enhanced. Electrochemical impedance spectroscopy showed that the galvanic corrosion resistance of RuN_x increased and that of the ruthenium oxide layer decreased as N_2 flow ratio increased. This was because the increase in the N content in the RuN_x films inhibited the corrosion and oxidation of the Ru metals.
机译：在这项研究中，我们研究了在化学机械抛光浆料中以各种氮气（N_2）气体流速沉积的铜金属与氮化钌（RuN_x）膜之间的电流效应。发现随着N_2气体流量比的增加，RuN_x薄膜的电化腐蚀得到抑制，而Cu籽晶层的电化腐蚀得到增强。电化学阻抗谱表明，随着N_2流量比的增加，RuN_x的耐电腐蚀性能提高，而氧化钌层的耐电腐蚀性能降低。这是因为RuN_x膜中N含量的增加抑制了Ru金属的腐蚀和氧化。

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  • 来源
    《Japanese journal of applied physics》 |2011年第12期|p.121803.1-121803.6|共6页
  • 作者

    Chia-Yang Wu; Wen-Hsi Lee; Shih-Chieh Chang; Ying-Lang Wang;

  • 作者单位

    Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.;

    Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.;

    Institute of Lighting and Energy Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.;

    Institute of Lighting and Energy Photonics, National Chiao Tung University, Hsinchu 30050, Taiwan, R.O.C.;

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