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首页> 外文期刊>Japanese journal of applied physics.Part 1.Regular papers & short notes >Backexposure Effect in Chemically Amplified Resist Process upon Exposure to Extreme Ultraviolet Radiation
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Backexposure Effect in Chemically Amplified Resist Process upon Exposure to Extreme Ultraviolet Radiation

机译：暴露于极紫外辐射下的化学放大抗蚀剂工艺中的反接触效应

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摘要

With the progress in the resist development toward the realization of 22 nm high volume production using extreme ultraviolet (EUV) lithography, practical issues such as defects, filtering, and etching durability have recently attracted much attention. The side wall profile of resist patterns is among such issues. Although EUV radiation is hardly reflected at the resist-underlayer boundary, secondary electrons generated in the underlayer sensitize acid generators in the resist. In this study, the backexposure effect on the side wall profile of line-and-space patterns was theoretically investigated. The potential difference between the resist and the underlayer and the absorption coefficient of the underlayer significantly affected the sidewall profile. The image quality at the bottom of the resist layer was also improved by increasing the absorption coefficient of the underlayer.
机译：随着使用极紫外（EUV）光刻技术实现22纳米大批量生产的抗蚀剂开发的进展，诸如缺陷，过滤和蚀刻耐久性等实际问题最近引起了很多关注。抗蚀剂图案的侧壁轮廓就是这样的问题。尽管EUV辐射几乎未在抗蚀剂下层边界反射，但在底层中产生的二次电子会使抗蚀剂中的酸产生剂敏感。在这项研究中，从理论上研究了背面曝光对线条和空间图案的侧壁轮廓的影响。抗蚀剂和底层之间的电势差以及底层的吸收系数显着影响侧壁轮廓。通过增加底层的吸收系数，还改善了抗蚀剂层底部的图像质量。

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  • 来源
    《Japanese journal of applied physics.Part 1.Regular papers & short notes》 |2011年第1issue1期|p.016504.1-016504.5|共5页
  • 作者

    Takahiro Kozawa; Seiichi Tagawa; Ryuji Ohnishi; Takafumi Endo; Rikimaru Sakamoto;

  • 作者单位

    The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan;

    The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan;

    Nissan Chemical Industries, Ltd., 635 Sasakura, Fuchu, Toyama 939-2792, Japan;

    Nissan Chemical Industries, Ltd., 635 Sasakura, Fuchu, Toyama 939-2792, Japan;

    Nissan Chemical Industries, Ltd., 635 Sasakura, Fuchu, Toyama 939-2792, Japan;

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