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首页> 外文期刊>Japanese journal of applied physics.Part 1.Regular papers & short notes >Effect of Pt and Al Electrodes on Resistive Switching Properties of Sputter-Deposited Cu-Doped SiO-2 Film
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Effect of Pt and Al Electrodes on Resistive Switching Properties of Sputter-Deposited Cu-Doped SiO-2 Film

机译：Pt和Al电极对溅射沉积Cu掺杂SiO-2膜电阻开关特性的影响

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摘要

A copper-doped silica (Cu-SiO-2) film of 50 nm thickness was prepared by cosputter deposition of Cu and SiO-2 targets. A metal-oxide-metal (MOM) cell comprising a Cu-SiO-2 layer sandwiched between a Cu top electrode and a Pt or Al bottom electrode was utilized to characterize resistive switching behavior. Both celts exhibited bipolar switching behavior. Electric conduction of the cell in the high-resistance state prepared using the Pt bottom electrode followed the space-charge-limited-current mechanism, whereas the cell prepared using the Al bottom electrode exhibited Schottky emission. An intermediate oxide layer was observed and attributed to the Schottky emission in the cell prepared using Al bottom electrode.
机译：通过共溅射沉积Cu和SiO-2靶材，制备了厚度为50 nm的铜掺杂二氧化硅（Cu-SiO-2）膜。利用包括夹在Cu顶部电极和Pt或Al底部电极之间的Cu-SiO-2层的金属氧化物金属（MOM）电池来表征电阻开关行为。两种硅藻土都表现出双极开关行为。使用Pt底部电极制备的高电阻状态的电池的导电遵循空间电荷限制电流机制，而使用Al底部电极制备的电池表现出肖特基发射。观察到中间氧化物层，并归因于使用Al底部电极制备的电池中的肖特基发射。

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  • 来源
    《Japanese journal of applied physics.Part 1.Regular papers & short notes》 |2011年第1issue3期|p.01BG08.1-01BG08.4|共4页
  • 作者

    Chia-Jen Li; Shyankay Jou; Wei-Ling Chen;

  • 作者单位

    Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, R.O.C.;

    Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, R.O.C.;

    Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan, R.O.C.;

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