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首页> 外文期刊>Japanese journal of applied physics >High-Temperature Thermoelectric Property of Layered La_(2-2x)Ca_(1+2x)Mn_2O_7 Manganites (0.75≤x≤1.0)
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High-Temperature Thermoelectric Property of Layered La_(2-2x)Ca_(1+2x)Mn_2O_7 Manganites (0.75≤x≤1.0)

机译：层状La_（2-2x）Ca_（1 + 2x）Mn_2O_7锰矿（0.75≤x≤1.0）的高温热电性质

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摘要

La_(2-2x)Ca_(1+2x)Mn_2O_7 manganites with a doping concentration range of 0.75≤x≤1.0 have been investigated to evaluate their thermoelectric properties in the high-temperature range from 400 to 1200 K. The materials, which are well known as n = 2 Ruddlesden-Popper compounds, have been confirmed as n-type semiconductors from the observation of the temperature dependence of the electrical conductivity and Seebeck coefficients. The electrical conductivity increases with increasing La concentration, suggesting hopping conduction. The thermal conductivity of the materials examined in this study is less than 1.0W·m~(-1)·K~(-1) at room temperature. The dimensionless figure of merit (ZT) was drastically enhanced by La doping, and had the value of 0.018 at 1173K for La_(0.05).Ca_(2.95)Mn_2O_7. This behavior is similar that of the well-known layered structure such as the p-type misfit-layered Ca_3Co_4O_9 where high Seebeck coefficient and low thermal conductivity.
机译：研究了La_（2-2x）Ca_（1 + 2x）Mn_2O_7掺杂浓度范围为0.75≤x≤1.0的锰矿，以评估其在400至1200 K高温范围内的热电性能。通过观察电导率和塞贝克系数的温度依赖性，已经确认了众所周知的n = 2 Ruddlesden-Popper化合物为n型半导体。电导率随La浓度的增加而增加，表明存在跳跃传导。本研究中所研究材料的热导率在室温下小于1.0W·m〜（-1）·K〜（-1）。 La掺杂显着提高了无量纲的品质因数（ZT），La_（0.05）.Ca_（2.95）Mn_2O_7在1173K时的值为0.018。此行为类似于众所周知的分层结构，例如p型错配层Ca_3Co_4O_9，其中塞贝克系数高且导热率低。

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  • 来源
    《Japanese journal of applied physics》 |2011年第4issue1期|p.041101.1-041101.6|共6页
  • 作者

    Takeshi Toyoda; Naoya Sasaki; Kazuhiro Shimada; Maki Okube; Satoshi Sasaki;

  • 作者单位

    Industrial Research Institute of Ishikawa, Kanazawa 920-8203, Japan;

    Industrial Research Institute of Ishikawa, Kanazawa 920-8203, Japan;

    Industrial Research Institute of Ishikawa, Kanazawa 920-8203, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

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