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首页> 外文期刊>Japanese journal of applied physics >Application of Sputtered ZnO_(1-x)S_x Buffer Layers for Cu(ln,Ga)Se_2 Solar Cells
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Application of Sputtered ZnO_(1-x)S_x Buffer Layers for Cu(ln,Ga)Se_2 Solar Cells

机译：溅射ZnO_（1-x）S_x缓冲层在Cu（In，Ga）Se_2太阳能电池中的应用

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摘要

A CdS buffer layer is commonly used in high efficiency Cu(ln,Ga)Se_2 (CIGS) solar cells. The CdS layer is typically prepared by chemical bath deposition. From the viewpoint of the environmental impact of Cd and the need for in-line processing for mass production, there is a need to find an alternative to wet-chemically deposited CdS. In this study, ZnO_(1_x)S_x thin films were prepared by radio frequency co-sputtering using ZnO and ZnS targets, which should allow for high controllability of the compositional ratios of O and S. The ZnO_(1_x)S_x thin film with an S content x of 0.18 showed a band gap energy (E_g) of 2.9 eV. The performance of a CIGS solar cell with a ZnO_(0.82)S_(0.18) buffer layer was compared with that with a CdS buffer layer which had an E_g of 2.5 eV. The CIGS solar cell with the Zn0_(0.82)S_(0.18) buffer layer yielded an efficiency approaching that of the cell with the CdS buffer layer. This is due to a higher short-circuit current density due to both a suitable conduction band offset of the ZnO_1( _X)S_X/CIGS interface and a decrease in absorption loss compared to the CIGS solar cell with the CdS buffer layer. These results indicate that, similar to CdS, ZnO_(1-x)S_x can be very useful as a buffer layer in CIGS solar cells.
机译：CdS缓冲层通常用于高效Cu（ln，Ga）Se_2（CIGS）太阳能电池中。 CdS层通常通过化学浴沉积来制备。从Cd的环境影响和大规模生产的在线处理的需求的角度出发，需要找到一种湿化学沉积CdS的替代方法。在这项研究中，ZnO_（1_x）S_x薄膜是通过使用ZnO和ZnS靶材进行射频共溅射制备的，这应该可以实现O和S组成比的高度可控性。 S含量x为0.18时，带隙能（E_g）为2.9eV。比较了具有ZnO_（0.82）S_（0.18）缓冲层的CIGS太阳能电池的性能与具有E_g为2.5 eV的CdS缓冲层的CIGS太阳能电池的性能。具有Zn0_（0.82）S_（0.18）缓冲层的CIGS太阳能电池的效率接近具有CdS缓冲层的电池的效率。这是由于与具有CdS缓冲层的CIGS太阳能电池相比，由于ZnO_1（_X）S_X / CIGS界面的合适导带偏移和吸收损耗的降低，短路电流密度更高。这些结果表明，与CdS相似，ZnO_（1-x）S_x可用作CIGS太阳能电池中的缓冲层。

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  • 来源
    《Japanese journal of applied physics》 |2011年第4issue2期|p.04DP10.1-04DP10.3|共3页
  • 作者

    Akira Okamoto; Takashi Minemoto; Hideyuki Takakura;

  • 作者单位

    Ritsumeikan University, College of Science and Engineering, Kusatsu, Shiga 525-8577, Japan;

    Ritsumeikan University, Ritsumeikan Global Innovation Research Organization, Kusatsu, Shiga 525-8577, Japan;

    Ritsumeikan University, College of Science and Engineering, Kusatsu, Shiga 525-8577, Japan;

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