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Evaluation of a New Advanced Low-k Material

机译：评估新型先进的Low-k材料

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摘要

New advanced low dielectric constant films (spin-on 2.0) with k = 2.0 were prepared by using a self-assembling technology and deposited by the spin-on method. The open porosity of the films was equal to 40% and they exhibit good mechanical properties (Young's modulus for the pristine sample, thermally cured, is 4.77 GPa and hardness is 0.54 GPa). The principal advantage of these films is the absence of sp2 carbon that is typically formed in porogen based plasma enhanced chemical vapor deposition (PECVD) films and causes high leakage current. The change of the film's properties after UV assisted thermal curing at T = 430℃ with lamps having different wavelengths (narrowband with ,1 = 172nm and broadband lamp with A > 200 nm) was studied. Electrical measurements show a small increase of the k-value, however FTIR spectroscopy shows no bulk and surface hydrophilization after the curing. Observed decreases in thickness and porosity indicate densification of the matrix.
机译：采用自组装技术制备了k = 2.0的新型先进低介电常数薄膜（旋涂2.0），并通过旋涂方法进行了沉积。薄膜的开孔孔隙率等于40％，并且具有良好的机械性能（经热固化的原始样品的杨氏模量为4.77 GPa，硬度为0.54 GPa）。这些膜的主要优点是不存在通常在基于孔洞的等离子体增强化学气相沉积（PECVD）膜中形成的sp2碳，并且会引起高泄漏电流。研究了不同波长的灯（窄带，1 = 172nm，宽带灯，A> 200 nm）在T = 430℃下UV辅助热固化后薄膜性能的变化。电学测量显示k值略有增加，但是FTIR光谱显示固化后没有体积和表面亲水化。观察到的厚度和孔隙率降低表明基质致密化。

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  • 来源
    《Japanese journal of applied physics》 |2011年第5issue2期|p.05EB03.1-05EB03.5|共5页
  • 作者

    Evgeny A. Smirnov; Kris Vanstreels; Patrick Verdonck; Ivan Ciofi; Denis Shamiryan; Mikhail R. Baklanov; Mark Phillips;

  • 作者单位

    IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium, Moscow Institute of Electronic Technology, Zelenograd, Moscow 124498, Russia;

    IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium;

    IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium;

    IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium;

    IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium;

    IMEC vzw, Kapeldreef 75, B-3001 Leuven, Belgium;

    SBA Materials, Inc., 9430-H San Mateo Blvd, NE Albuquerque, NM 87113, U.S.A.;

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