...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Japanese journal of applied physics >Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond
【24h】

Effects of Postetching Treatment on Molecular-Pore-Stacking/Cu Interconnects for 28 nm Node and Beyond

机译：后刻蚀处理对28 nm节点及以上分子孔堆积/ Cu互连的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The effects of postetching treatment (PET) using carbon-containing gas on molecular-pore-stacking (MPS)/Cu interconnects were investigated. By using this technology, a 5% reduction in wiring capacitance was obtained as a result of the hardening of exposed MPS at the trench bottom. Via-chain yield improvement was also confirmed as a result of eliminating of etching residues in via-holes. These results indicate that high production yield and reliability can be obtained by PET for 28-nm-node complementary metal oxide semiconductor (CMOS) devices and beyond.
机译：研究了使用含碳气体的后蚀刻处理（PET）对分子孔堆叠（MPS）/ Cu互连的影响。通过使用该技术，由于沟槽底部暴露的MPS硬化，布线电容降低了5％。由于消除了通孔中的蚀刻残留物，也证实了通孔链良率的提高。这些结果表明，对于28-nm节点互补金属氧化物半导体（CMOS）器件及其以后的器件，PET可以实现高产量和可靠性。

著录项

  • 来源
    《Japanese journal of applied physics》 |2011年第5issue2期|p.05EB04.1-05EB04.6|共6页
  • 作者

    Daisuke Oshida; Ippei Kume; Hirokazu Katsuyama; Toshiji Taiji; Takuya Maruyama; Makoto Ueki; Naoya Inoue; Manabu Iguchi; Kunihiro Fujii; Noriaki Oda; Michio Sakurai;

  • 作者单位

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

    Renesas Electronics Corporation, 1120 Shimokuzawa, Chuou-ku, Sagamihara 252-5298, Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号