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首页> 外文期刊>Japanese journal of applied physics >Demonstration of ZnTe_1-xO_x Intermediate Band Solar Cell
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Demonstration of ZnTe_1-xO_x Intermediate Band Solar Cell

机译:ZnTe_1-xO_x中带太阳能电池的演示

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摘要

We report the optical properties of ZnTe_1-xO_x (ZnTeO) and evidence for the photovoltaic (PV) activity of a ZnTeO intermediate band solar cell (IBSC). By photomodulated reflectance measurements, electron transitions from the intermediate band to the conduction band were demonstrated. The optical absorption coefficients for the electron transition from the valence band to the intermediate band exceeds 2 ×10~4cm~-1, suitable for thin-film PV device applications. The ZnTeO IBSC exhibits an enhanced spectral response below the band edge of ZnTe, and all results are consistent with the proposed conversion mechanism of IBSC.
机译:我们报告了ZnTe_1-xO_x(ZnTeO)的光学性质,以及ZnTeO中带太阳能电池(IBSC)的光伏(PV)活性的证据。通过光调制反射率测量,证明了电子从中间带到导带的跃迁。电子从价带跃迁到中间带的光吸收系数超过2×10〜4cm〜-1,适合薄膜光伏器件应用。 ZnTeO IBSC在ZnTe的谱带边缘以下显示出增强的光谱响应,并且所有结果与IBSC的拟议转换机制均相符。

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  • 来源
    《Japanese journal of applied physics》 |2011年第8issue1期|p.082304.1-082304.3|共3页
  • 作者单位

    Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan,PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan;

    Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.;

    Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.,Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, U.S.A.;

    Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.,Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, U.S.A.;

    Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.,RoseStreet Labs Energy, Phoenix, AZ 85034, U.S.A;

    Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.;

    Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502, Japan;

    Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A;

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