Stability of Carbon Incorpoated Semipolar GaN(1101) Surface

Toru Akiyama; Kohji Nakamura; Tomonori Ito

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Stability of Carbon Incorpoated Semipolar GaN(1101) Surface

机译：碳结合半极性GaN（1101）表面的稳定性

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The structural stability of carbon incorporated GaN(1101) surfaces is theoretically investigated by performing first-principles pseudopotential calculations. The calculated surface formation energies taking account of the metal organic vapor phase epitaxy conditions demonstrate that several carbon incorporated surfaces are stabilized depending on the growth conditions. Using surface phase diagrams, which are obtained by comparing the calculated adsorption energy with vapor-phase chemical potentials, we find that the semipolar surface forms NH_2 and CH_2 below ~1660 K while the polar GaN(0001) surface with CH_3 is stabilized below ~1550 K. This difference could be one of possible explanations for p-type doping on the semipolar GaN(1101) surface.

机译：理论上通过执行第一性原理pseudo势计算研究了掺碳GaN（1101）表面的结构稳定性。考虑到金属有机气相外延条件而计算出的表面形成能表明，根据生长条件，几个掺入碳的表面是稳定的。使用表面相图，通过将计算出的吸附能与气相化学势进行比较，我们发现半极性表面在〜1660 K以下形成NH_2和CH_2，而CH_3的极性GaN（0001）表面稳定在〜1550以下K。这种差异可能是对半极性GaN（1101）表面上的p型掺杂的可能解释之一。

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来源
《Japanese journal of applied physics》 |2011年第8issue1期|p.080216.1-080216.3|共3页
作者
Toru Akiyama; Kohji Nakamura; Tomonori Ito;
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Department of Physics Engineering, Mie University, Tsu 514-8507, Japan;

Department of Physics Engineering, Mie University, Tsu 514-8507, Japan;

Department of Physics Engineering, Mie University, Tsu 514-8507, Japan;

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1. Surface reconstruction and magnesium incorporation on semipolar GaN(1101) surfaces [J] . Toru Akiyama, Daisuke Ammi, Kohji Nakamura, Physical review . 2010,第24期

机译：半极性GaN（1101）表面的表面重建和镁结合
2. Control of GaN facet structures through Eu doping toward achieving semipolar {1101} and {2201} InGaN/GaN quantum wells [J] . Takanori Kojima, Shota Takano, Ryosuke Hasegawa, Applied Physics Letters . 2016,第18期

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3. Bluish-green semipolar GaInN/GaN light emitting diodes on {1101} GaN side facets [J] . T. Wunderer, F. Lipski, J. Hertkorn, Physica status solidi . 2008,第6期

机译：{1101} GaN侧面的蓝绿色半极性GaInN / GaN发光二极管
4. Bluish-green semipolar GaInN/GaN light emitting diodes on {1101} GaN side facets [C] . T. Wunderer, F. Lipski, J. Hertkorn, International Conference of Nitride Semiconductors . 2008

机译：{1101} {1101} GaN侧面的蓝绿色半极性Gainn / GaN发光二极管
5. Computer simulations of the structure, stability and phase transitions of diatomic molecules physisorbed on ionic surfaces: the carbon monoxide/magnesium oxide(001), nitrogen/magnesium oxide(001) and nitrogen/sodium chloride(001) systems. [D] . Sallabi, Abdulwahab K. 2002

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6. Density and Stability of Soil Organic Carbon beneath Impervious Surfaces in Urban Areas [O] . Zongqiang Wei, Shaohua Wu, Xiao Yan, 2010

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7. Microscopic distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (1101)(1101)()(1101)() GaN revealed from spatially resolved luminescence [O] . Okur S., Metzner S., Izyumskaya N., 2013

机译：从空间分辨发光揭示半极性（1101）（1101）（）（1101）（）GaN中堆叠缺陷的扩展缺陷的微观分布和螺纹位错的阻塞

Stability of Carbon Incorpoated Semipolar GaN(1101) Surface

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